DMP2035UQ-7 [TYSEMI]
P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage; P沟道增强型MOSFET的低输入/输出泄漏
| 型号： | DMP2035UQ-7 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage |
| 文件： | 总2页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMP2035U
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
•
•
•
ESD Protected Up To 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Drain
SOT23
D
Gate
Gate
Protection
Diode
Source
S
G
Top View
ESD PROTECTED TO 3kV
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMP2035U-7
DMP2035UQ-7
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000 / 7” Tape & Reel
3000 / 7” Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
MP3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
MP3
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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Product specification
DMP2035U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
±8
Gate-Source Voltage
V
VGSS
T
A = +25°C
Steady
State
-3.6
-2.9
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
A
A
ID
TA = +70°C
-24
IDM
Thermal Characteristics
Characteristic
Symbol
PD
Value
0.81
Unit
W
Power Dissipation (Note 5)
153.5
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
-
-
-1.0
±10
μA
μA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
VDS = -20V, VGS = 0V
IGSS
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
-
-0.7
-1.0
V
VGS(th)
VDS = VGS, ID = -250μA
V
GS = -4.5V, ID = -4.0A
23
30
41
35
45
62
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
-
-
14
-
S
V
|Yfs|
VSD
-0.7
-1.0
-
-
-
-
-
-
-
-
-
-
-
1610
157
145
9.45
15.4
2.5
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
GS = -4.5V, VDS = -10V,
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
I
D = -4A
3.3
16.8
12.4
94.1
42.4
Turn-On Delay Time
Turn-On Rise Time
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6.0Ω, ID = -1A
Turn-Off Delay Time
Turn-Off Fall Time
tD(off)
tf
Notes:
3. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t
أ
10s. 4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
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