IRLML2502PBF [TYSEMI]
Ultra Low On-Resistance SOT-23 Footprint N-Channel MOSFET Available in Tape and Reel; 超低导通电阻SOT -23尺寸的N沟道MOSFET可在磁带和卷轴
| 型号： | IRLML2502PBF |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Ultra Low On-Resistance SOT-23 Footprint N-Channel MOSFET Available in Tape and Reel |
| 文件： | 总2页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
IRLML2502PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
G
S
1
2
VDSS = 20V
3
D
RDS(on) = 0.045Ω
l Lead-Free
l Halogen-Free
Description
These N-Channel MOSFETs from International Rectifier
utilizeadvancedprocessingtechniquestoachieveextremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
thatHEXFET® powerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
Micro3™
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
suchasportableelectronicsandPCMCIAcards.Thethermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
4.2
3.4
A
33
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
W
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
V
VGS
Gate-to-Source Voltage
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
75
100
°C/W
http://www.twtysemi.com
sales@twtysemi.com
1 of 2
Product specification
IRLML2502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
20
Typ.
–––
Max. Units
Conditions
VGS = 0V, ID = 250uA
V/°C Reference to 25°C, ID = 1.0mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
–––
–––
0.60
–––
5.8
0.01
Ω
0.035 0.045
0.050 0.080
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
VGS(th)
ΔVGS(th)
gfs
Gate Threshold Voltage
–––
-3.2
–––
–––
–––
–––
–––
8.0
1.8
1.7
7.5
10
1.2
V
VDS = VGS, ID = 250μA
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
––– mV/°C
–––
1.0
S
VDS = 10V, ID = 4.0A
VDS = 16V, VGS = 0V
IDSS
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
μA
25
VDS = 16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
100
-100
12
VGS = 12V
VGS = -12V
ID = 4.0A
nA
nC
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.7
VDS = 10V
VGS = 5.0V
2.6
–––
–––
–––
–––
–––
–––
–––
VDD = 10V
ID = 1.0A
RG = 6Ω
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
54
26
RD = 10Ω
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Ciss
Coss
Crss
Input Capacitance
740
90
pF
Output Capacitance
Reverse Transfer Capacitance
66
Source-Drain Rating and Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
1.3
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
integral reverse
–––
–––
33
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
16
1.2
24
13
V
TJ = 25°C, IS = 1.3A, VGS = 0V
ns TJ = 25°C, IF = 1.3A
di/dt = 100A/μs
nC
Qrr
Reverse Recovery Charge
8.6
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300μs; duty cycle ≤ 2%.
http://www.twtysemi.com
sales@twtysemi.com
2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明