KO3416 [TYSEMI]
VDS (V) = 20V ID = 6.5 A RDS(ON) 22mΩ (VGS = 4.5V) RDS(ON) 26mΩ (VGS = 2.5V); VDS （V ） = 20V ID = 6.5 RDS（ON） 22mÎ © （ VGS = 4.5V ）的RDS（ ON） 26mÎ © （ VGS = 2.5V ）
| 型号： | KO3416 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | VDS (V) = 20V ID = 6.5 A RDS(ON) 22mΩ (VGS = 4.5V) RDS(ON) 26mΩ (VGS = 2.5V) |
| 文件： | 总4页 (文件大小：457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrManOsSisFtIIEoCCrT
IC
Product specification
KO3416
SOT-23-3
Unit: mm
+0.2
2.9
-0.2
+0.1
0.4
-0.05
■ Features
3
● VDS (V) = 20V
● ID = 6.5 A
● RDS(ON) ＜ 22mΩ (VGS = 4.5V)
● RDS(ON) ＜ 26mΩ (VGS = 2.5V)
● RDS(ON) ＜ 34mΩ (VGS = 1.8V)
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.2
-0.2
1.9
D
1. Gate
G
2. Source
3. Drain
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
20
Unit
V
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
V
±8
6.5
5.2
30
Continuous Drain Current *1 TA=25℃
TA=70℃
ID
A
Pulsed Drain Current *2
IDM
1.4
0.9
90
Power Dissipation *1
TA=25℃
TA=70℃
PD
W
RθJA
RθJL
Thermal Resistance.Junction-to-Ambient *1
Maximum Junction-to-Lead *3
t ≤ 10s
℃/W
℃/W
℃
60
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
2
*1: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper,
in a still air environment with T A =25°C. The value in any a given application depends on the user's
specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
*2: Repetitive rating, pulse width limited by junction temperature.
*3. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
http://www.twtysemi.com
1 of 4
sales@twtysemi.com
4008-318-123
TrM
an
O
Sis
FtIII
EoCCCr
T
S
F
E
T
IC
Product specification
KO3416
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
ID=250μA, VGS=0V
Min
20
Typ Max
Unit
V
Drain-Source Breakdown Voltage
VDSS
VDS=16V, VGS=0V
1
5
Zero Gate Voltage Drain Current
IDSS
μA
VDS=16V, VGS=0V ,TJ=55℃
VDS=0V, VGS=±8V
VDS=VGS ID=250μA
VGS=4.5V, ID=6.5A
Gate-Body leakage current
Gate Threshold Voltage
IGSS
±10 μA
VGS(th)
0.4
0.6
18
25
21
26
1
V
22
30
26
34
mΩ
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
VGS=4.5V, VDS=5V
VDS=5V, ID=6.5A
TJ=125℃
Static Drain-Source On-Resistance
RDS(ON)
mΩ
mΩ
A
On state drain current
ID(ON)
gFS
Ciss
Coss
Crss
Rg
30
Forward Transconductance
Input Capacitance
29
1160
187
146
1.5
S
pF
pF
pF
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=6.5A
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A
Total Gate Charge
Qg
16
Gate Source Charge
Qgs
Qgd
tD(on)
tr
0.8
Gate Drain Charge
3.8
Turn-On DelayTime
6.2
Turn-On Rise Time
12.7
51.7
16
VGS=5V, VDS=10V, RL=1.5Ω,RGEN=3Ω
Turn-Off DelayTime
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
trr
17.7
6.7
IF=6.5A, dI/dt=100A/μs
IF=6.5A, dI/dt=100A/μs
Qrr
IS
2.5
1
VSD
IS=1A,VGS=0V
0.76
V
■ Marking
Marking
A08K
http://www.twtysemi.com
2 of 4
sales@twtysemi.com
4008-318-123
TrM
an
O
Sis
FtIII
EoCCCr
T
S
F
E
T
IC
Product specification
KO3416
■ Typical Characteristics
20
15
10
5
30
8V
VGS=5V
VGS =2V
20
VGS =1.5V
10
0
125°C
VGS =1V
25°C
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
GS(Volts)
Figure 2: Transfer Characteristics
2.0
2.5
V
DS(Volts)
V
Figure 1: On-Regions Characteristics
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
ID=6.5A
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS =1.8V
VGS =2.5V
VGS =4.5V
0
5
10
15
20
0
25
50
75
100
125
150
175
I
D(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
50
40
30
20
10
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
ID=6.5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
VSD(Volts)
VGS(Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
http://www.twtysemi.com
3 of 4
sales@twtysemi.com
4008-318-123
Tr
M O S F E T
Os
Sis
FtIII
EoCCCr
T
IC
Product specification
KO3416
2000
1600
1200
800
400
0
5
VDS=10V
ID=6.5A
4
Ciss
3
2
1
0
Crss
Coss
0
5
10
15
20
0
5
10
15
20
VDS(Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
40
30
20
10
0
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
PD
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
http://www.twtysemi.com
4 of 4
sales@twtysemi.com
4008-318-123
相关型号：
©2020 ICPDF网 联系我们和版权申明