关闭背景特效

KQB3N30 [TYSEMI]

3.2A, 300 V. RDS(ON) = 2.2 VGS = 10 V Low gate charge (typical 5.5nC) Low Crss(typical 6.0pF); 3.2A ， 300 V的RDS （ ON） = 2.2 VGS = 10V低栅极电荷（典型值5.5nC ）低的Crss （典型值6.0pF ）

KQB3N30


元器件型号：	KQB3N30
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	3.2A, 300 V. RDS(ON) = 2.2 VGS = 10 V Low gate charge (typical 5.5nC) Low Crss(typical 6.0pF) 3.2A ， 300 V的RDS （ ON） = 2.2 VGS = 10V低栅极电荷（典型值5.5nC ）低的Crss （典型值6.0pF ）栅极
PDF文件：	总2页 (文件大小：114K)
下载文档：	下载PDF数据表文档文件
型号参数：KQB3N30参数

KQB3N40

400V N-Channel MOSFET

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2 KEXIN

KQB3N40

2.5A, 400 V. RDS(ON) = 3.4 VGS = 10 V Low gate charge (typical 6.0nC) Fast switching

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11 TYSEMI

KQB4N50

500V N-Channel MOSFET

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14 KEXIN

KQB4N50

3.4A, 500 V. RDS(ON) = 2.7 VGS = 10 V Low gate charge (typical 10nC) Fast switching

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14 TYSEMI

KQB4P40

400V P-Channel MOSFET

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4 KEXIN

KQB5N20

200V N-Channel MOSFET

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2 KEXIN

KQB5N20

4.5A, 200 V. RDS(ON) = 1.2 VGS = 10 V Low gate charge (typical 6.0nC)

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11 TYSEMI

KQB5N60

600V N-Channel MOSFET

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7 KEXIN

KQB5N60

5.0A, 600 V. RDS(ON) = 2.0 VGS = 10 V Low gate charge (typical 16nC)

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8 TYSEMI

KQB630

9A, 200 V. RDS(ON) = 0.4 VGS = 10 V Low gate charge (typical 19nC)

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7 TYSEMI

KQB630

200V N-Channel MOSFET

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6 KEXIN

KQB6N25

250V N-Channel MOSFET

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7 KEXIN

KQB6N25

5.5A, 500 V. RDS(ON) = 1 VGS = 10 V Low gate charge (typical 6.6nC)

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14 TYSEMI

KQB6N70

6.2A, 700 V. RDS(ON) = 1.5 VGS = 10 V Low gate charge (typical 130nC)

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10 TYSEMI

KQB6N70

700V N-Channel MOSFET

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6 KEXIN

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