KRF1302S [TYSEMI]
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating; 先进的工艺技术超低导通电阻动态的dv / dt额定值
| 型号： | KRF1302S |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
KRF1302S
TO-263
Unit: mm
+0.2
4.57
-0.2
Features
+0.1
1.27
-0.1
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
Repetitive Avalanche Allowed up to Tjmax
2.54
1 gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 drain
3 source
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 10V,TC = 25
Continuous Drain Current, VGS @ 10V,TC = 100
Pulsed Drain Current
Symbol
ID
Rating
174
120
700
200
1.4
Unit
A
ID
IDM
PD
W
W/
V
Power Dissipation TC = 25
Linear Derating Factor
Gate-to-Source Voltage
VGS
EAS
20
Single Pulse Avalanche Energy
Avalanche Current*1
350
mJ
A
IAR
Fig.1.2
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
mJ
V/ns
dv/dt
TJ,TSTG
TBD
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
-55 to + 175
300
0.74
40
R
R
JC
JA
/W
Junction-to-Ambient (PCB mount)
Fig1. Unclamped Inductive Test Circuit
Fig 2. Unclamped Inductive Waveforms
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TransistIoCrs
Product specification
KRF1302S
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0V, ID = 250µA
Min
20
Typ
Max
Unit
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V(BR)DSS
0.021
3.3
V(BR)DSS/ TJ Reference to 25 , ID = 1mA
V/
m
RDS(on)
VGS(th)
gfs
VGS = 10V, ID = 104A
VDS = VGS, ID = 250
VDS = 15V, ID = 104A
VDS = 20V, VGS = 0V
4.0
4.0
2.0
6.7
V
A
Forward Transconductance
S
20
250
200
-200
120
27
Drain-to-Source Leakage Current
IDSS
A
VDS = 16V, VGS = 0V, TJ = 150
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
nA
VGS = -20V
ID = 104A
Qg
Qgs
Qgd
td(on)
tr
79
18
nC
ns
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = 16V
VGS = 10V
31
46
VDD = 11V
28
ID = 104A
130
47
Turn-Off Delay Time
Fall Time
td(off)
tf
RG = 4.5
VGS = 10V
16
Intermal Drain Inductance
Internal Source Inductance
LD
LS
4.5
7.5
nH
Input Capacitance
Ciss
Coss
VGS = 0V
3600
2370
520
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Output Capacitance
Crss
f = 1.0MHz
pF
Coss
VGS = 0V, VDS = 1.0V, f = 1.0MHz
VGS = 0V, VDS = 16V, f = 1.0MHz
VGS = 0V, VDS = 0V to 16V
5710
2370
3540
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
IS
174
700
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode)
A
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD
trr
1.3
100
200
V
ns
C
TJ = 25 , IS = 104A, VGS = 0V
TJ = 25 , IF = 104A
66
Qrr
ton
130
di/dt = 100A/
s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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4008-318-123
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