KRF7501 [TYSEMI]

Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET; 第五代技术Ulrtra低导通电阻双N沟道MOSFET


型号：	KRF7501
厂家：	TY Semiconductor Co., Ltd
描述：	Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET 第五代技术Ulrtra低导通电阻双N沟道MOSFET
文件：	总2页 (文件大小：383K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Product specification

KRF7501

Features

Generation V Technology

Ulrtra Low On-Resistance

Dual N-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

I^D

Rating

Unit

2.4

Continuous Drain Current, V^GS@ 10V,Ta = 25

Continuous Drain Current, V^GS@ 10V,T^A= 70

Pulsed Drain Current*1

I^D

1.9

I^DM

P^D

1.25

Power Dissipation Ta = 25 *1

Power Dissipation Ta = 70 *1

Linear Derating Factor

P^D

0.8

0.01

V^GSM

V^GS

Gate-to-Source Voltage Single Pulse tp 10

Gate-to-Source Voltage

Peak Diode Recovery dv/dt*1

d^v/d^t

V/ns

Junction and Storage Temperature Range

Junction-to-Ambient *2

T^J, T^STG

-55 to + 150

100

* I^SD

1.7A, dⁱ/d^t

66A/ s, V^DD

V^(BR)DSS,T^J

10sec.

150

*2 Surface mounted on FR-4 board, t

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Product specification

KRF7501

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VGS = 0V, ID = 250

Min

Typ

Max

Unit

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

V(BR)DSS

0.041

V(BR)DSS/ TJ ID = 1mA,Reference to 25

V^GS= 4.5V, I^D= 1.7A*1

R^DS(on)

V^GS= 2.7V, I^D=0.85A*1

0.085 0.135

0.120 0.20

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V^GS(th)

g^fs

0.70

2.6

V^DS= V^GS, I^D= 250

Forward Transconductance

V^DS= 10V, I^D= 0.85A*1

V^DS= 16V, V^GS= 0V

V^DS= 16V, V^GS= 0V, T^J= 125

V^GS= 12V

1.0

Drain-to-Source Leakage Current

I^DSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

-100

100

I^GSS

V^GS= -12V

Q^g

Q^gs

Q^gd

t^d(on)

t^r

I^D= 1.7A

5.3

0.84

2.2

5.7

8.0

1.3

3.3

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

V^DS= 16V

V^GS= 4.5V,*1

V^DD= 10V

I^D= 1.7A

Turn-Off Delay Time

Fall Time

t^d(off)

t^f

R^G=6.0

R^D= 5.7

Input Capacitance

C^iss

C^oss

C^rss

V^GS= 0V

260

130

Output Capacitance

V^DS= 15V

Reverse Transfer Capacitance

f = 1.0MHz

I^S

1.25

Continuous Source Current Body Diode)

Pulsed Source Current Body Diode) *2

I^SM

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

V^SD

t^rr

1.2

TJ = 25 , IS = 1.7A, VGS = 0V*1

T^J= 25 , I^F= 1.7A.V^R=10V

dⁱ/d^t= 100A/ s*1

Q^rr

*1 Pulse width

300 s; duty cycle

2%.

*2 Repetitive rating; pulse width limited bymax

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Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET

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