CHA7010 [UMS]
X-band GaInP HBT High Power Amplifier; X波段的GaInP HBT大功率放大器
| 型号： | CHA7010 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | X-band GaInP HBT High Power Amplifier |
| 文件： | 总7页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA7010
X-band GaInP HBT High Power Amplifier
GaAs Monolithic Microwave IC
Main Features
Description
The CHA7010 is a monolithic two stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components. Special heat removal
techniques are implemented to guarantee
high reliability.
n 10W output power
n High gain : > 18dB @ 10GHz
n High PAE : > 35% @ 10GHz
n On-chip bias control
n Linear collector current control
n High impedance interface for pulse
mode
n Temperature compensated
n Chip size: 4.74 x 4.36 x 0.1 mm
To simplify the assembly process;
•
•
the backside of the chip is both RF and
DC grounded
bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-sonic or
thermo-compression bonding process.
Vctr
Vc
Vctr
Vc
Inter-stage
Input
Matching
Network
Output
Combiner
Vc
Vctr
Vctr
Vc
Main Characteristics
Tamb = +25°C
Symbol
F_op
Parameter
Operating frequency range
Saturated output power
Min
Typ
Max
Unit
GHz
W
8.4
9.4
10
8
10.4
P_sat
P_1dBc Output power @ 1dBc
G_lin Linear gain
W
18
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA70102175 -24-June-02 1/7 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7010
Electrical Characteristics
Tamb = 25°C, Vc=9V, Vctr=5.5V, Pulse width=80µs , Duty cycle = 30%
Symbol
F_op
Parameter
Operating frequency
Min
8.4
14
Typ
9.4
Max
Unit
GHz
dB
10.4
G_lin_1
G_lin_2
G_lin_T
RL_in
Linear gain (8.4 to 9.4GHz)
16
Linear gain (9.4 to 10.4GHz)
Linear gain variation versus temperature
Input Return Loss
16
18
dB
-0.035
12
dB/°C
dB
8
6
RL_out
P_sat_1
P_sat_2
P_sat_T
Output Return Loss
12
dB
Saturated output power (8.4 to 9.8GHz)
Saturated output power (9.8 to 10.4GHz)
39
38
40
dBm
dBm
dB/°C
39
Saturated output power variation versus
temperature
-0.01
P_1dBc_1
P_1dBc_2
PAE_sat
PAE_1dBc
Vc
Output power @ 1dBc (8.4 to 9.8GHz)
Output power @ 1dBc (9.8 to 10.4GHz)
Power Added Efficiency in saturation
Power Added Efficiency @ 1dBc
Power supply voltage
38
37
30
27
39
38
35
32
9
dBm
dBm
%
%
V
Ic
Power supply quiescent current (1)
Collector current control voltage
Vctr input port impedance (2)
2.4
5.5
350
A
Vctr
V
Zctr
Ohm
°C
Top
Operating temperature range (3)
-30
+80
(1) This parameter is fixed by Vctr
(2) This value corresponds to the 4 ports in parallel (Pin 4, 9, 17, 22)
(3) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vc
Parameter
Compression level
Values
Unit
dB
V
6
10
Power supply voltage
Ic
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Storage temperature range
2.8
A
Ic_sat
Vctr
3.5
A
6.5
V
Tstg
-55 to +125
°C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA70102175 -24-June-02
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7010
Typical measured characteristics
Measurements in test fixture :
Tamb=25°C, Vc=9V, Vctr=5.5V, Pulse width=80µs , Duty cycle = 30%
20
16
12
8
4
db(S21)
0
-4
db(S11)
db(S22)
-8
-12
-16
-20
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency(GHz)
S-parameters
42
40
38
36
34
32
30
28
26
24
22
Pout @ 8,4 GHz
Pout @ 8,6 GHz
Pout @ 8,8 GHz
Pout @ 9 GHz
Pout @ 9.2 GHz
Pout @ 9.4 GHz
Pout @ 9.6 GHz
Pout @ 9.8 GHz
Pout @ 10 GHz
Pout @ 10.2 GHz
Pout @ 10.4 GHz
-1
0
1
2
3
4
5
6
7
Compression level (dB)
Output power versus compression level : F= 8.4 to 10.4GHz
Ref. : DSCHA70102175 -24-June-02
3/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7010
Typical measured characteristics
Measurements in test fixture :
Tamb=25°C, Vc=9V, Vctr=5.5V, Pulse width=80µs , Duty cycle = 30%
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
3900
3700
3500
3300
3100
2900
2700
2500
2300
2100
1900
1700
1500
Pout @ pin = 27 dBm
Pae @ pin = 27 dBm
gain @ pin = 27 dBm
Ic @ pin = 27 dBm
8,4
8,6
8,8
9
9,2
9,4
9,6
9,8
10
10,2 10,4
Frequency (GHz)
Saturated output power, PAE, Gain and collector current versus frequency
Ref. : DSCHA70102175 -24-June-02
4/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7010
Dimensions and Pad allocation
2
3
4
5
6
7
8
9
10
11
12
1
13
23
21
14
24
22
20
19 18 17
16
15
Unit = µm
External chip size (including saw streets) = 4740 x 4360 +/- 35
Chip thickness = 100 +/- 10
HF pads (1, 13) = 118 x 68
DC pads (4, 9, 17, 22) = 96 x 96
DC pads (6, 11, 15, 20) = 288 x 96
Pin number
Pin name
IN
Description
Input RF port
NC
1
2, 3, 8, 18, 23, 24
4, 9, 17, 22
Vctr
GND
Vc
Collector control current port
Ground (NC)
5, 7, 10, 12, 14, 19, 16, 21
6, 11, 15, 20
Power supply voltage
Output RF port
13
OUT
Ref. : DSCHA70102175 -24-June-02
5/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Assembly recommendations
C2
CHA7010
C1
Vc
Vctr
C1
C1
C2
C1
Lbonding
Lbonding
C2
Vctr
C1
C1
Vc
C1
C1
C2
For thermal and electrical considerations, the chip should be brazed on a metal base
plate.
The RF, DC and modulation port inter-connections should be done according to the
following table:
Port
Connection
External capacitor
IN (1)
OUT (13)
Vc (6, 11, 15, 20))
Inductance (Lbonding) = 0.4nH
Inductance (Lbonding) = 0.4nH
Inductance ~ 1nH
C1 ~ 100pF
C2 ~ 10nF
C1 ~ 100pF
Vctr (4, 9, 17, 22)
Inductance ~ 1nH
Ref. : DSCHA70102175 -24-June-02
6/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7010
Ordering Information
Chip form
:
CHA7010-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA70102175 -24-June-02
7/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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