CHA7012_09 [UMS]

X-band HBT High Power Amplifier; X波段HBT大功率放大器


型号：	CHA7012_09
厂家：	UNITED MONOLITHIC SEMICONDUCTORS
描述：	X-band HBT High Power Amplifier X波段HBT大功率放大器放大器功率放大器
文件：	总10页 (文件大小：397K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CHA7012

RoHS COMPLIANT

X-band HBT High Power Amplifier

GaAs Monolithic Microwave IC

Description

TI Vc TO

Vctrl Vc Vc

The CHA7012 chip is a monolithic two-stage

GaAs high power amplifier designed for X band

applications.

TTL

Circuit

Biasing

Circuit

This device is manufactured using a GaInP

HBT process, including, via holes through the

substrate and air bridge. A nitride layer protects

the transistors and the passive components.

OUT

Special

heat

removal

techniques

are

implemented to guarantee high reliability.

To simplify the assembly process:

-the backside of the chip is both RF and DC

grounded

Biasing

Circuit

TTL

Circuit

-bond pads and back side are gold plated for

compatibility with eutectic die attach method

and thermosonic or thermo compression

bonding process.

Vctrl Vc Vc

TI Vc TO

PAE@3dBc (%)

Pout@3dBc(dBm

Main Features

ꢀ

Frequency band: 9.2 -10.4GHz

Output power (P3dB ): 38.5dBm

High linear gain: > 20dB

High PAE: > 38%

Two biasing modes:

Linear Gain (Pin=0dBm)

-VDigital control thanks to TTL interface

-VAnalog control thanks to biasing circuit

Chip size: 5.00 x 3.68 x 0.1mm

ꢀ

9.2

9.4

9.6

9.8

10.2

10.4

10.6

Frequency ( GHz)

Pout & PAE @3dBc and Linear Gain @ 25°C

Main Characteristics

Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%

Symbol

Fop

Parameter

Operating frequency range

Saturated output power @ 25°C

Min

Typ

Max

Unit

GHz

9.2

10.4

Psat

P_3dBc Output power @ 3dBc @ 25°C

Small signal gain @ 25°C

°C

Top

Operating temperature range

-40

+80

ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!

Ref. : DSCHA70129082- 23 March 09

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

Electrical Characteristics

Tamb = 20°C, Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%

Symbol

Fop

Parameter

Operating frequency

Min

9.2

Typ

Max

10.4

Unit

GHz

Small signal gain

17.5

G_T

Small signal gain variation versus

temperature

-0.025

dB/°C

RLin

RLout

Psat

Input Return Loss

Output Return Loss

Saturated output power

39.5

-0.01

dBm

dB/°C

Psat_T

Saturated output power variation versus

temperature

P_3dBc

PAE_3dBc

Output power @ 3dBc (3)

Power Added Efficiency @ 3dBc

Power supply voltage (3)

Power supply quiescent current (1)

TTL input voltage

38.5

dBm

7.5

1.9

I_TI

TTL input current

Vctrl

Zctr

Collector control voltage

Vctrl input port impedance (2)

Operating temperature range

350

Ohm

°C

Top

-40

+80

(1) Parameter tunable by Vctrl when control biasing circuit used.

(2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18)

(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on

robustness see Maximum ratings)

Absolute Maximum Ratings (1)

Tamb = 20°C

Symbol

Cmp

Parameter

Compression level (2)

Values

Unit

dBc

Power supply voltage with RF

Power supply quiescent current

Power supply current in saturation

Collector current control voltage

Maximum junction temperature

Storage temperature range

2.8

Ic_sat

Vctrl

3.5

6.5

175

°C

Tstg

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) For higher compression the level limit can be increased by decreasing the voltage Vc using

the rate 0.5 V / dBc

Equivalent Thermal resistance to Backside: 6°C/W

Ref. : DSCHA70129082- 23 March 09

2/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

Typical measured characteristics

Measurements on Jig

Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%

+20°C

+80°C

-40°C

8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1

Frequency (GHz)

Linear gain versus frequency and temperature

+20°C

+80°C

-40°C

8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1

Frequency (GHz)

Output Power @ 3dBc versus frequency and temperature

Ref. : DSCHA70129082- 23 March 09

3/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

+20°C

+80°C

-40°C

8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1

Frequency (GHz)

PAE @ 3dBc versus frequency and temperature

2.9

2.8

2.7

2.6

2.5

2.4

2.3

2.2

2.1

+20°C

+80°C

-40°C

8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1

Frequency (GHz)

Ic @ 3dBc versus frequency and temperature

Ref. : DSCHA70129082- 23 March 09

4/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

9.2GHz

9.4GHz

9.6GHz

9.8GHz

10GHz

10.2GHz

10.4GHz

-1

Compression (dB)

Output Power @ 25°C versus compression and frequenc y

9.2GHz

9.4GHz

9.6GHz

9.8GHz

10GHz

10.2GHz

10.4GHz

-1

Compression (dB)

PAE @ 25°C versus compression and frequency

Ref. : DSCHA70129082- 23 March 09

5/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

2.9

2.8

2.7

2.6

2.5

2.4

2.3

2.2

2.1

9.2GHz

9.4GHz

9.6GHz

9.8GHz

10GHz

10.2GHz

10.4GHz

-1

Compression (dB)

Collector current @ 25°C versus compression and fr equency

Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pul se= 100µs, Duty cycle 20%

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Vctrl

TTL Input Voltage

+80

20 °C

-40 °C

+80 °C

-40 °C

TI/Vctrl (V)

Collector quiescent current versus TI & Vctrl and temperature

Ref. : DSCHA70129082- 23 March 09

6/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

Temperatures: -40°C; 20°C;+80°C Vc=7.5V Pulse= 100µs, Duty cycle 20%

+80°C

+20°C

-40°C

Collector current control versus control voltage & temperature

VCTRL (V)

Collector current control versus control voltage and temperature

Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pulse= 100µs, Duty cycle20%

TTL input current versus TTL voltage and temperature

1.2

0.8

0.6

0.4

0.2

+80°C

+20°C

-40°C

V TTL( V)

TTL input current versus TTL voltage and temperature

Ref. : DSCHA70129082- 23 March 09

7/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

Chip Mechanical Data and Pin references

22 21 20

19 18

16 15 14

Chip thickness = 100µm +/- 10 µm

RF pads (1, 12) = 96 x 196µm²

DC pads (2, 3, 4, 5, 9,15, 19, 20, 21, 22) = 96 x 96µm²

DC pads (7, 17) = 192 x 96µm²

DC pads (11, 13) = 288 x 96µm²

Pin number

Pin name

Description

Input RF

8, 16

5, 9, 15, 19

2, 22

Vctrl

Collector current control voltage

TTL input

4, 20

TTL output

6, 10, 14, 18

3, 7, 11, 13, 17, 21

GND

V,Vc1,Vc2

OUT

Ground (NC)

Power supply voltage

Output RF

Ref. : DSCHA70129082- 23 March 09

8/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

Bonding recommendations

For thermal and electrical considerations, the chip should be brazed on a metal base plate.

The RF, DC and modulation port inter-connections should be done according to the following

table:

Port

Connection

IN (1)

Inductance (Lbonding) = 0.3nH

400µm length with wire diameter of 25 µm

OUT (12)

Inductance (Lbonding) = 0.3nH

400µm length with wire diameter of 25 µm

DC pads to 1^stdecoupling level

for double bonding

DC pads to 1^stdecoupling level

for single bonding

Inductance (Lbonding) =0.7nH

Two 1.2mm length wires with a diameter of 25 µm

Inductance (Lbonding) =1nH

One 1.2mm length wires with a diameter of 25 µm

1^stdecoupling level to 2^nd

decoupling level for double

bonding

Inductance (Lbonding) =0.7nH

Two 1.2mm length wires with a diameter of 25 µm

1^stdecoupling level to 2^nd

decoupling level for single

bonding

Inductance (Lbonding) =1nH

One 1.2mm length wires with a diameter of 25 µm

Assembly recommendations in test fixture (using TTL circuits)

Vc*

TI*

OUT

100pF

Non capacitive pad

10nF

1µF

TI*

Vc*

100µF

* Performances obtained with the same accesses connected to the same supply

Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.

Ref. : DSCHA70129082- 23 March 09

9/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

X-band High Power Amplifier

CHA7012

Assembly recommendations in test fixture

(using analog biasing circuits)

Vctrl

OUT

100pF

10nF

1µF

Vctrl

100µF

Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.

Ordering Information

Chip form

CHA7012-99F/00

Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.

assumes no responsibility for the consequences of use of such information nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any

patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication

are subject to change without notice. This publication supersedes and replaces all information previously supplied.

United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life

support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.

Ref. : DSCHA70129082- 23 March 09

10/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

CHA7012_09 [UMS]

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