CHA7114-99F [UMS]
X Band High Power Amplifier; X波段高功率放大器
| 型号： | CHA7114-99F |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | X Band High Power Amplifier |
| 文件： | 总8页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA7114
RoHS COMPLIANT
X Band High Power Amplifier
GaAs Monolithic Microwave IC
Vg2
Vd2
Description
The CHA7114 is a monolithic two-stage
GaAs high power amplifier designed for
X band applications.
Vg1 Vd1
This device is manufactured using a UMS
0.25µm power pHEMT process, including,
via holes through the substrate and air
bridges.
IN
OUT
Vg1 Vd1
To simplify the assembly process:
•
•
The backside of the chip is both RF and
DC grounded
Bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-compression
bonding process.
Vg2 Vd2
50
45
40
35
30
25
20
15
10
PAE @ 4dBc
Pout @ 4dBc
Main Features
ꢀ 0.25µm Power pHEMT Technology
ꢀ 8.5–11.5GHz Frequency Range
ꢀ 8W Output Power @ 4dBcp
ꢀ High PAE: > 40% @ 4dBcp
ꢀ 20dB nominal Gain
Linear Gain
Pulse : 25µs 10%
ꢀ Quiescent Bias point: Vd = 8V, Id = 2A
ꢀ Chip size: 4.41 x 3.31 x 0.07mm
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10%
Symbol
Top
Parameter
Operating temperature range
Operating frequency range
Min
-40
8.5
Typ
Max
+80
11.5
Unit
°C
GHz
W
Fop
P_4dBcp Output power @ 4dBcp @ 25°C
Small signal gain @ 25°C
8
G
20
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA7114-0197 - 16 Jul 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax : +33 (0) 1 69 33 03 09
X-band High Power Amplifier
CHA7114
Electrical Characteristics
Tamb = 25°C, Vd = 8V, Id (Quiescent) = 2A, Pulse wi dth = 25µs, Duty cycle=10%
Symbol
Fop
Parameter
Operating frequency
Min
8.5
Typ
Max
11.5
23
Unit
GHz
dB
G
Small signal gain
17.5
20
G_T
Small signal gain variation versus
temperature
-0.033
dB/°C
RLin
RLout
Psat
Input Return Loss
8
6
10
8
dB
dB
Output Return Loss
Saturated output power
39.8
-0.008
dBm
dB/°C
Psat_T
Saturated output power variation
versus temperature
P_4dBcp
PAE_4dBcp
Id
Output power @ 4dBcp (2)
Power Added Efficiency @ 4dBcp
Supply drain current
38
36
39
42
dBm
%
A
2.3
8.0
2.0
-4.0
2.6
8.5
Vd1, Vd2
Id_q
Drain supply voltage (2)
V
Supply quiescent drain current (1)
Gate Power supply voltage
Operating temperature range
A
Vg1, Vg2
Top
V
-40
+80
°C
(1) Parameter to be adjusted by tuning of Vg
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vd
Parameter
Compression level (2)
Values
Unit
dB
V
6
Drain Power supply voltage (3)
Drain Power supply quiescent current
Drain Power supply current in saturation
Gate Power supply voltage
10
Id
2.5
A
Id_sat
Vg
3
-8
A
V
Tj
Maximum junction temperature (4)
Storage temperature range
175
°C
°C
Tstg
-55 to +125
(1)
(2)
Operation of this device above anyone of these parameters may cause permanent
damage.
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBcp
(3)
(4)
Without RF input power
Equivalent Thermal Resistance to Backside: 5.6°C/W for backside temp. of 80°C.
[ Junction Temperature comes from: Tj = Tbackside + ETRB x (Dissipated Power)
Where ETRB stands for Equivalent Thermal Resistance to Backside. ]
Ref. : DSCHA7114-0197 - 16 Jul 10
2/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
X band High Power Amplifier
CHA7114
Typical measured characteristics
Measurements on Jig:
Vd = 8V, Vg = -4.0V, Id (Quiescent) = 2.2A, Pulse width = 25µs, Duty cycle = 10%
30
28
26
24
22
20
18
16
-40°C
14
80°C
12
20°C
10
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Linear gain versus frequency and temperature
42
41
40
39
38
37
36
35
34
33
32
-40°C
80°C
20°C
8
8,5
9
9,5
10
Frequency (GHz)
Output Power @ 4dBcp versus frequency and temperature
10,5
11
11,5
12
Ref : DSCHA7114-0197 - 16 Jul 10
3/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
X-band High Power Amplifier
CHA7114
50
48
46
44
42
40
38
36
34
32
30
-40°C
80°C
20°C
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
PAE @ 4dBcp versus frequency and temperature
4
3,5
3
2,5
2
-40°C
80°C
20°C
1,5
1
0,5
0
8
8,5
9
9,5
Frequency (GHz)
Id @ 4dBcp versus frequency and temperature
10
10,5
11
11,5
12
Ref. : DSCHA7114-0197 - 16 Jul 10
4/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
X band High Power Amplifier
CHA7114
41
39
37
35
33
31
29
27
25
8GHz
8.4GHz
8.8GHz
9.2GHz
9.6GHz
10GHz
10.4GHz
10.8GHz
11.2GHz
11.6GHz
12GHz
-1
0
1
2
3
4
5
6
7
8
9
Compression (dB)
Output Power @ 25°C versus compression and frequenc y
60
50
40
30
20
10
0
8GHz
8.4GHz
8.8GHz
9.2GHz
9.6GHz
10GHz
10.4GHz
10.8GHz
11.2GHz
11.6GHz
12GHz
-1
0
1
2
3
4
5
6
7
8
9
Compression (dB)
PAE @ 25°C versus compression and frequency
Ref : DSCHA7114-0197 - 16 Jul 10
5/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
X-band High Power Amplifier
CHA7114
16 15 14 13 12
11
1
2
10
9
3 4
5 6 7
8
Chip Mechanical Data and Pin references
Chip width and length are given with a tolerance of +/- 35µm
Chip thickness = 70µm +/- 10µm
HF pads (1, 10) = 118µm x 196µm
DC pads (3, 4, 5, 6, 7, 12, 13, 14, 15, 16) = 96µm x 96µm
DC pads (8, 11) = 186µm x 96 µm
Pin number
2, 9
3, 7, 12, 16
1
Pin name
Description
Not Connected
Not Connected
Input RF port
G1, G2
IN
4, 6, 13, 15
Vg1R, Vg2R Vg: Negative supply voltage (through divided bridge
Network)
5, 8, 11, 14
10
Vd1, Vd2
OUT
Vd: Positive supply voltage
Output RF port
Ref. : DSCHA7114-0197 - 16 Jul 10
6/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
X band High Power Amplifier
CHA7114
Bonding recommendations
Port
Connection
External capacitor
Inductance (Lbonding) = 0.3nH
2 gold wires bondings (550 µm max)
Inductance (Lbonding) = 0.3nH
2 gold wires bondings (550µm max)
Inductance ≤ 1nH
IN
OUT
Vd1, Vd2
Vg1R, Vg2R
C1 ~ 100pF
C1 ~ 100pF
C2 ~ 10nF
Inductance ≤ 1nH
Assembly recommendations (drain voltage pulsed mode operation)
Vg
Vd
Vg
Vd
C1=100pF
C2=10nF
Vg: gate supply voltage
Vd: drain supply voltage
Ref : DSCHA7114-0197 - 16 Jul 10
7/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
X-band High Power Amplifier
CHA7114
Ordering Information
Chip form
:
CHA7114-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S
Ref. : DSCHA7114-0197 - 16 Jul 10
8/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
相关型号：
CHA8100-99F/00
Wide Band High Power Amplifier, 9000MHz Min, 10500MHz Max, 4.90 X 3.68 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-22
UMS
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