CHR2296_11 [UMS]
36-40GHz Integrated Down Converter; 36-40GHz集成下变频器
| 型号： | CHR2296_11 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 36-40GHz Integrated Down Converter |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHR2296
RoHS COMPLIANT
36-40GHz Integrated Down Converter
GaAs Monolithic Microwave IC
LO
Description
The CHR2296 is a multifunction chip which
integrates a LO time two multiplier, a
balanced cold FET mixer, and a RF LNA. It
is designed for a wide range of applications,
Q
I
typically
commercial
communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
GM
GB
VDM
VDL
GX
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
VGA
It is available in chip form.
RF
Typical on wafer measurement:
Conversion Gain & Image suppression
Main Features
@ IF=1GHz
16
12
8
Broadband performances: 36-40GHz
11 dB conversion gain
5dB noise figure, for IF>0.1GHz
10dBm LO input power
-10dBm RF input power (1dB gain comp.)
Low DC power consumption, 110mA@3.5V
Chip size: 2.49 X 1.97 X 0.10mm
4
0
-4
-8
Gc_channel_inf_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf-
Gc_channel_sup_rf+
-12
-16
-20
-24
-28
34
35
36
37
38
39
40
2*LO Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
FRF
Parameter
RF frequency range
Min
Typ
Max
Unit
36
17
DC
9
40
20
GHz
GHz
GHz
dB
FLO
LO frequency range
IF frequency range
Conversion gain
FIF
1.5
Gc
11
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHR22961192 - 11 Jul 11
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Down Converter
CHR2296
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
FRF
Parameter
RF frequency range
Min
36
17
DC
9
Typ
Max
40
Unit
GHz
GHz
GHz
dB
FLO
LO frequency range
IF frequency range
Conversion gain (1)
20
FIF
1.5
Gc
11
5
NF
Noise Figure, for IF>0.1GHz (1)
dB
PLO
LO Input power
+10
15
dBm
dBc
dBm
Img Sup Image Suppression
13
P1dB
Input power at 1dB gain compression
-10
2.0:1
LO
VSWR
Input LO VSWR (1)
Input RF VSWR (1)
Bias current (2)
RF
VSWR
3.0:1
110
Id
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm =
50mA and Idl = 60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Maximum drain bias voltage
Values
4.0
Unit
V
Id
Maximum drain bias current
200
mA
V
Vg
Gate bias voltage
-2.0 to +0.4
-5
Vgd
Pin
Minimum negative gate drain voltage ( Vg – Vd)
Maximum peak input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
V
+15
dBm
°C
°C
°C
Tch
Ta
175
-40 to +85
-55 to +125
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Ref. : DSCHR22961192 - 11 Jul 11
2/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Down Converter
CHR2296
Typical On-wafer Measurements
Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.9V, Vgb= -0.4V, Vgx= -0.8V, Vga= -0.5V
16
12
8
4
0
-4
-8
Gc_channel_inf_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf-
Gc_channel_sup_rf+
-12
-16
-20
-24
-28
34
35
36
37
38
39
40
2*LO Frequency (GHz)
Conversion gain & Image suppression with a 90° IQ combiner @ IF=1GHz
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
Freq. RF= 38GHz
Freq LO= 18.5GHz
Conversion Gain_I (dB)
IF_power_I (dBm)
Conversion Gain_Q (dB)
IF_power_Q (dBm)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input RF power (dBm)
Input RF compression by channel
Ref. : DSCHR22961192 - 11 Jul 11
3/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Down Converter
CHR2296
Chip Assembly and Mechanical Data
LO
IN
Q
OUT
To Vgm DC Gate Supply
To Vgb DC Gate Supply
To Vdm,Vdl DC Drain Supply
To Vgx DC Gate Supply
I
OUT
To Vga DC Gate Supply
RF
IN
Note: Supply feed should be bypassed. 25µm diameter gold wire is recommended
Bonding pad positions
(Chip thickness: 100µm. All dimensions are in micrometers)
Ref. : DSCHR22961192 - 11 Jul 11
4/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Down Converter
CHR2296
Notes
Ref. : DSCHR22961192 - 11 Jul 11
5/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Down Converter
CHR2296
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Ordering Information
Chip form:
CHR2296-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHR22961192 - 11 Jul 11
6/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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