UD3008 [UNITPOWER]
N-Ch 30V Fast Switching MOSFETs; N-CH 30V的快速开关MOSFET
| 型号： | UD3008 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UD3008
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UD3008 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDS(ON)
ID
30V
25mΩ
24A
Applications
The UD3008 meet the RoHS and Green Product
requirement with full function reliability approved.
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
30
Units
V
Drain-Source Voltage
VGS
Gate-Source Voltage
±20
24
V
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
A
15
A
7.3
A
5.8
A
50
A
EAS
Single Pulse Avalanche Energy3
26.6
12.7
20.8
2
mJ
A
IAS
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
PD@TC=25℃
PD@TA=25℃
TSTG
W
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
62
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
6
1
UD3008
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=10A
0.023
20
---
V/℃
25
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=8A
30
38
VGS(th)
Gate Threshold Voltage
1.5
-4.2
---
2.5
---
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=24V , VGS=0V , TJ=25℃
VDS=24V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=10A
5.5
2.3
4.9
1.66
1.85
1.6
15.8
13
Rg
VDS=0V , VGS=0V , f=1MHz
4.6
6.9
2.3
2.6
3.2
28
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS=15V , VGS=4.5V , ID=10A
nC
ns
Qgs
Qgd
Td(on)
Tr
VDD=15V , VGS=10V , RG=3.3Ω
ID=10A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
26
4.8
416
62
9.6
582
87
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
51
71
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
6
---
---
mJ
VDD=25V , L=0.1mH , IAS=6A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
24
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
50
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
---
V
---
8.7
1.95
nS
nC
IF=10A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD3008
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
65
50
35
20
ID=10A
2
4
6
8
10
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
6
4
T =150
T =25
℃
J
℃
J
2
0
0.00
0.25
0.50
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UD3008
N-Ch 30V Fast Switching MOSFETs
1000
100
10
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
Coss
Crss
10ms
100ms
DC
0.10
Tc=25oC
Single Pulse
0.01
1
5
9
13
17
21
25
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
TON
0.02
0.01
T
D = TON/T
SINGLE
TJpeak = TC+PDMXRθJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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