UD6001 [UNITPOWER]
P-Ch 60V Fast Switching MOSFETs; P沟道60V的快速开关MOSFET
| 型号： | UD6001 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | P-Ch 60V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：841K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UD6001
P-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
The UD6001 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
ID
BVDSS
RDS(ON)
-60V
110mΩ
-11.5A
Applications
The UD6001 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z Power management in half bridge and inverters
z DC-DC Converter
z LCD / LED Backlight Application
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
-60
±20
-11.5
-8.9
V
V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
A
A
-23
A
EAS
Single Pulse Avalanche Energy3
29
mJ
A
IAS
Avalanche Current
-20
PD@TC=25℃
TSTG
Total Power Dissipation4
16
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
Max.
62
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
---
---
RθJC
5
1
UD6001
P-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-60
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=-1mA
VGS=-10V , ID=-8A
-0.049
98
---
V/℃
---
110
160
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-4.5V , ID=-6A
---
140
VGS(th)
Gate Threshold Voltage
-1.0
---
V
VGS=VDS , ID =-250uA
△VGS(th)
V
GS(th) Temperature Coefficient
5.42
---
mV/℃
VDS=-48V , VGS=0V , TJ=25℃
VDS=-48V , VGS=0V , TJ=150℃
---
1
IDSS
Drain-Source Leakage Current
uA
---
---
5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-5V , ID=-5A
---
5.8
5.85
2.92
1.8
10
Qg
---
---
VDS=-20V , VGS=-4.5V , ID=-5A
nC
Qgs
Qgd
Td(on)
Tr
---
---
---
---
Turn-On Delay Time
Rise Time
---
---
VDD=-12V , VGS=-10V , RG=3.3Ω,
---
17
---
ns
ID=-5A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
22
---
---
21
---
Ciss
Coss
Crss
Input Capacitance
---
715
51
---
VDS=-15V , VGS=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
---
34
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
8
---
---
mJ
VDD=-25V , L=0.1mH , IAS=-10A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
-11.5
-23
Unit
A
IS
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
VG=VD=0V , Force Current
ISM
VSD
---
---
A
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-20A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD6001
P-Ch 60V Fast Switching MOSFETs
P-Channel Typical Characteristics
8
215
180
145
110
75
ID=-5A
6
VGS=-10V
VGS=-7V
VGS=-5V
4
2
0
VGS=-4.5V
VGS=-4V
0
0.5
1
1.5
2
2
4
6
8
10
-VDS , Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
7.5
5
10
VDS=-12V
ID=-5A
8
6
4
2
0
T =150
T =25
℃
J
℃
J
2.5
0
0.2
0.4
0.6
0.8
1
0
3.5
7
10.5
14
-VSD , Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.8
1.4
1
1.5
1.0
0.5
0.6
0.2
-50
25
100
175
-50
0
50
100
150
T ,Junction Temperature (
)
℃
T , Junction Temperature ( )
℃
J
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UD6001
P-Ch 60V Fast Switching MOSFETs
1000
100
10
100
10
1
Ciss
10us
100us
Coss
Crss
10ms
100ms
DC
T =25
℃
C
Single Pulse
F=1.0MHz
5
0
0.1
1
10
-VDS (V)
100
1000
1
1
9
13
-VDS (V)
17
21
25
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
TON
0.02
0.01
T
D = TON/T
TJpeak = TC + PDM x RθJC
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
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