UM3004 [UNITPOWER]
N-Ch 30V Fast Switching MOSFETs; N-CH 30V的快速开关MOSFET
| 型号： | UM3004 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Unitpower
UM3004
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM3004 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
9mꢁ
30V
10.3A
Applications
The UM3004 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
ꢀ High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
ꢀ Networking DC-DC Power System
ꢀ Load Switch
function reliability approved.
Features
SOP8 Pin Configuration
ꢀ Advanced high cell density Trench technology
ꢀ Super Low Gate Charge
ꢀ Excellent CdV/dt effect decline
ꢀ 100% EAS Guaranteed
Top View
S2
G2
S1
G1
D2
D2
D1
D1
1
2
3
4
8
ꢀ Green Device Available
7
6
5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltageꢀ
30
ꢀ20ꢀ
10.3
Gate-Souꢁce Voltage
V
ID@TA=25ꢁ
ID@TA=70ꢁ
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
PulsedꢀDrain Current2
A
8.2
A
42
A
EAS
Single Pulse Avalanche Energy3
138
mJ
A
IAS
Avalanche Current
35
PD@TA=25ꢁ
TSTG
Total Power Dissipation4
1.5
W
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
ꢁꢂ
ꢁꢂ
TJ
Thermal Data
Symbol
RꢀJA
Parameter
ꢀ Typ.
---
Max.
85
Unit
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
ꢁ/Wꢀ
ꢁ/Wꢀ
RꢀJC
---
36
1
Unitpower
UM3004
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25ꢂꢁ, unless otherwise noted)
Symbol
Parameter
ꢀ Conditions
VGS=0V , ID=250uA
Min.
30
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
ꢂBVDSSꢃꢂTJ
Reference to 25ꢁꢀ, ID=1mA
VGS=10V , ID=10A
0.027
7.5
11
---
V/ꢁ
9
RDS(ON)
Static Drain-Source On-Resistance2
mꢀꢂ
VGS=4.5V , ID=8A
14
VGS(th)
Gate Threshold Voltage
1.5
-5.8
---
2.5
---
V
VGS=VDS , ID =250uA
ꢂVGS(th)
V
GS(th) Temperature Coefficient
mV/ꢁ
VDS=24V , VGS=0V , TJ=25ꢁ
VDS=24V , VGS=0V , TJ=55ꢁ
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGSꢄꢀ20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
ꢀ100
---
nA
S
VDS=5V , ID=10A
5.8
2.2
12.6
4.2
5.1
6.2
59
Rg
VDS=0V , VGS=0V , f=1MHz
3.8
17.6
5.9
7.1
12.4
106
55
ꢀ
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS=15V , VGS=4.5V , ID=10A
nC
ns
Qgs
Qgd
Td(on)
Tr
VDD=15V , VGS=10V , RG=3.3ꢀ
ID=10A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
27.6
8.4
1317
163
131
16.8
1845
228.2
183.4
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
ꢀ Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
45
---
---
mJ
VDD=25V , L=0.1mH , IAS=20A
Diode Characteristics
Symbol
Parameter
ꢀ Conditions
Min.
---
Typ.
---
Max.
10.3
42
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=1A , TJ=25ꢁ
---
---
1.2
---
V
---
12.5
5
nS
nC
IF=10A , dI/dt=100A/µs , TJ=25ꢁ
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ꢂ 300us , duty cycle ꢂ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=35A
4.The power dissipation is limited by 150ꢁ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unitpower
UM3004
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
12
11
9
42
ID=10A
VGS=10V
35
VGS=7V
VGS=5V
VGS=4.5V
VGS=3V
28
21
14
7
8
6
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
VDS , Drain-to-Source Voltage (V)
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
12
10
8
T =150
T =25
ꢅ
J
ꢅ
J
6
4
2
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
ꢀ
J
ꢀ
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
Unitpower
UM3004
N-Ch 30V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
10ms
Coss
Crss
100ms
0.10
DC
TA=25oC
Single Pulse
10
0.01
1
5
9
13
17
21
25
0.01
0.1
1
10
100
VDS , Drain to Source Voltage (V)
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
PDM
TON
T
D = TON/T
SINGLE
TJpeak = TC+PDMXRꢀJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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