10N50L-TA3-T [UTC]
10A, 500V N-CHANNEL POWER MOSFET; 10A , 500V N沟道功率MOSFET型号: | 10N50L-TA3-T |
厂家: | Unisonic Technologies |
描述: | 10A, 500V N-CHANNEL POWER MOSFET |
文件: | 总6页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N50
Preliminary
Power MOSFET
10A, 500V N-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 10N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 10N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
1
TO-220F1
FEATURES
* RDS(ON)=0.68Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
10N50L-TA3-T
10N50L-TF1-T
10N50G-TA3-T
10N50G-TF1-T
TO-220
TO-220F1
G
G
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-531.c
10N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 3)
10 (Note 2)
40 (Note 2)
10
A
Drain Current
IDM
A
Avalanche Current (Note 3)
Single Pulsed (Note 4)
Repetitive (Note 5)
IAR
A
EAS
388
mJ
mJ
V/ns
Avalanche Energy
EAR
14.3
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
TO-220
TO-220F1
TO-220
143
Power Dissipation
W
48
PD
1.14
Derate above 25°C
W/°C
TO-220F1
0.38
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55~+150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 7mH, IAS = 10A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
5. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220
TO-220F1
0.87
Junction to Case
θJC
°C/W
2.58
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10N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
500
2.0
V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
10
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=5A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.54 0.68
ꢀ
CISS
COSS
CRSS
1610 2096 pF
177 230 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
16
24
pF
QG
QGS
QGD
tD(ON)
tR
43
7.5
18.5
29
56
nC
nC
nC
ns
VGS=10V, VDS=400V, ID=10A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 1, 2)
67
VDD=250V, ID=10A, RG=25ꢀ
(Note 1, 2)
80 170 ns
141 290 ns
80 165 ns
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
10
40
A
A
IS=10A, VGS=0V
1.4
V
IS=10A, VGS=0V,
dIF/dt=100A/µs (Note 1)
50
ns
µC
QRR
0.1
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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10N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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10N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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10N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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