15N06_12 [UTC]
15A, 60V N-CHANNEL POWER MOSFET; 15A ， 60V N沟道功率MOSFET
| 型号： | 15N06_12 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 15A, 60V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
15N06
Power MOSFET
15A, 60V N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-220F
TO-252
DESCRIPTION
The UTC 15N06 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
1
FEATURES
* RDS(ON)<100mΩ @VGS=5V, ID=7.5A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SOP-8
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
G
G
G
G
S
S
2
D
D
D
D
S
S
3
S
S
S
S
S
S
4
-
5
-
6
-
7
-
8
-
15N06L-TA3-T
15N06L-TF3-T
15N06L-TN3-R
15N06L-TN3-T
15N06L-S08-R
15N06L-S08-T
15N06G-TA3-T
15N06G-TF3-T
15N06G-TN3-R
15N06G-TN3-T
15N06G-S08-R
15N06G-S08-T
TO-220
TO-220F
TO-252
TO-252
SOP-8
Tube
Tube
-
-
-
-
-
-
-
-
-
-
Tape Reel
Tube
-
-
-
-
-
G
G
D
D
D
D
D
D
D Tape Reel
Tube
SOP-8
D
www.unisonic.com.tw
1 of 6
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-260.D
15N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VDGR
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
60
60
Drain-Gate Voltage (RG=20kΩ)
Gate-Source Voltage
V
±15
15
V
Continuous Drain Current (TC=25°C)
Pulsed Drain Current (Note 2)
Avalanche Current (Note 3)
A
IDM
60
A
IAR
15
A
Single Pulsed (Note 4)
EAS
50
mJ
mJ
Avalanche Energy
Repetitive (Note 3)
TO-220
EAR
12
40
TO-220F
21
Power Dissipation
(TA=25°C)
PD
W
TO-252
28
SOP-8
2.0
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
Pulse width limited by TJ(MAX),δ<1%
3.
4.
Starting TJ=25°C, ID=IAR, VDD=25V
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220/ TO-220F
TO-252
Junction to Ambient
Junction to Case
θJA
110
SOP-8
125
TO-220
3.13
TO-220F
TO-252
5.95
θJC
°C/W
4.53
SOP-8
62.5
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=250µA
60
V
VDS=Max Rating
250
µA
IGSS
VDS=0V, VGS=±15V
±100 nA
VGS(TH)
ID(ON)
RDS(ON)
gFS
VDS=VGS, ID=250 µA
1
1.7
2.5
V
A
On State Drain Current
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
VGS=5V, ID=7.5A
15
Static Drain-Source On-Resistance
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
75
5
100
mΩ
S
VDS>ID(ON)×RDS(ON)MAX, ID=7.5A
3
CISS
COSS
CRSS
700
230
80
950
310
110
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-260.D
www.unisonic.com.tw
15N06
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
18
8
30
Gate Source Charge
Gate Drain Charge
VDD=40V, VGS=5V, ID=15A
nC
9
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
15
160
52
100
60
200
80
VGS=5V, VDD=30V, RG=4.7ꢀ,
ID=7.5A
ns
ns
tD(OFF)
tF
VGS=10V, VDD=48V, RG=47ꢀ
ID=15A
140
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Source-Drain Current
VSD
ISD
ISD=15 A,VGS=0V(Note 1)
1.5
15
60
V
A
A
Source-Drain Current (Pulse)
ISDM
(Note 2)
Note: 1. Pulse width=300μs, duty cycle=1.5%
Note: 2. Pulse width limited by safe operating area
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-260.D
www.unisonic.com.tw
15N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-260.D
www.unisonic.com.tw
15N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width≤ 1μs
Duty Factor≤0.1%
tF
tR
Switching Test Circuit
Switching Waveforms
QG
10V
QGS
QGD
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-260.D
www.unisonic.com.tw
15N06
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-260.D
www.unisonic.com.tw
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