15N10G-TN3-T [UTC]
14.7A, 100V (D-S) N-CHANNEL POWER MOSFET;
| 型号： | 15N10G-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
15N10
Power MOSFET
14.7A, 100V (D-S) N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 15N10 is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge.
The UTC 15N10 is suitable for high efficiency switching DC/DC
converter, LCD display inverter and load switch.
FEATURES
* RDS(ON)=0.08Ω @VGS=10V,ID=8A
* Low gate charge (Typ=24nC)
* Low CRSS (Typ=23pF)
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
15N10L-TN3-T
15N10L-TN3-R
15N10G-TN3-T
15N10G-TN3-R
TO-252
TO-252
G
G
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R502-846.B
15N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
RATINGS
100
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
TC=25°C, TJ=150°C
TC=70°C, TJ=150°C
14.7
A
Continuous
Pulsed
ID
IDM
PD
TJ
Drain Current
13.6
A
59
A
TC=25°C
TC=70°C
34.7
W
W
°C
Power Dissipation
22.2
Operating Junction Temperature
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
Junction to Case (Note)
SYMBOL
RATINGS
3.6
UNIT
°C/W
θJC
Note: The device mounted on 1in2 FR4 board with 2 oz copper.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
100
V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
1
µA
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8A
1
3
V
80 100 mΩ
CISS
COSS
CRSS
890
58
pF
pF
pF
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
23
QG
QG
VGS=10V, VDS=80V, ID=10A
VGS=4.5V, VDS=80V, ID=10A
VDS=0V, VGS=0V, f=1MHz
24
13
4.6
7.6
0.9
14
33
39
5
nC
nC
nC
nC
Ω
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate-Resistance
QGS
QGD
RG
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
ns
ns
ns
ns
VDS=50V, RL=5Ω, VGEN=10V,
RG=1ꢀ
Turn-OFF Delay Time
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V
0.9 1.2
V
Note: Pulse test: pulse width≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
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15N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
RG
RD
VDS
VGS
10V
10%
VGS
DUT
tR
td(OFF)
td(ON)
tON
tF
tOFF
Resistive Switching Waveforms
Resistive Switching Test Circuit
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QW-R502-846.B
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15N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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15N10
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
VDS=VGS
250
200
150
100
250
200
150
100
50
50
0
0
0
30
60
90
120
0
0.4
Gate Threshold Voltage, VTH (V)
0.8 1.2
1.6
2.0 2.4
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
10
10
VGS=10V
8
6
4
8
6
4
2
0
2
0
0
0.1
0.2 0.3
0.4 0.5 0.6
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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