18N40L-T47-T [UTC]
400V N-CHANNEL POWER MOSFET; 400V N沟道功率MOSFET
| 型号： | 18N40L-T47-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 400V N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
18N40
Power MOSFET
400V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC 18N40 is a 400V N-channel Power MOSFET,
providing customers with perfect RDS(ON), low gate charge and
operation with low gate voltages.
The UTC 18N40 is generally used as a load switch or applied in
PWM applications.
FEATURES
* RDS(ON) ≤ 408mΩ @VGS = 10 V
* Ultra Low Gate Charge: 50nC (TYP.)
* Low Reverse Transfer ( CRSS = typical 23pF )
* Fast Switching Speed
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
TO-247
Pin Assignment
Packing
Tube
Lead Free
Halogen-Free
1
2
3
18N40L-T47-T
18N40G-T47-T
G
D
S
www.unisonic.com.tw
1 of 3
Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-389.A
18N40
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
400
±30
18
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous
Pulsed
A
Drain Current
IDM
45
A
Avalanche Current
Avalanche Energy
IAR
18
A
Single Pulsed
Repetitive
EAS
1000
30
mJ
mJ
V/ns
W
EAR
dv/dt
PD
Peak Diode Recovery dv/dt
Power Dissipation
10
360
150
Junction Temperature
Storage Temperature
TJ
°С
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
0.35
UNIT
Junction to Case
θJC
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
BVDSS
IDSS
VGS=0V, ID=250µA
400
2.0
V
VDS=400V, VGS=0V
VDS=0V, VGS=±30V
25
µA
nA
IGSS
±100
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
4.0
V
VGS=10V, ID=9A (Note)
200
mΩ
CISS
COSS
CRSS
2500
280
23
pF
pF
pF
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
50
15
18
21
22
62
22
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=0.5VDSS
,
Gate Source Charge
ID=18A, RG=5ꢀ (External)
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
VGS=10V, VDS=0.5VDSS
ID=9A
,
Turn-OFF Delay Time
tD(OFF)
tF
Turn-OFF Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IF=IS ,VGS=0V (Note)
1.5
18
V
A
IS
VGS=0V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Repetitive
54
A
Reverse Recovery Time
tRR
VGS=0V, dIF/dt=100A/µs,
IS=18A, VR=100V
200
ns
Reverse Recovery Charge
QRR
0.8
µC
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-389.A
18N40
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
12
10
8
12
10
VGS=10V,
ID=9.0A
8
6
4
6
4
2
0
2
0
0
200
400
600
1000
0
1.0
1.5
2.0
800
0.5
Drain to Source Voltage, VDS (V)
Source to Drain Voltage,VSD (mV)
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
150
300
250
200
150
100
50
100
50
0
0
0
2
3
100
200
300
400
1
4
0
500
Gate Threshold Voltage,VTH (V)
Drain-Source Breakdown Voltage,BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-389.A
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