1N60G-TMS2-T [UTC]
Power Field-Effect Transistor,;型号: | 1N60G-TMS2-T |
厂家: | Unisonic Technologies |
描述: | Power Field-Effect Transistor, 开关 脉冲 晶体管 |
文件: | 总7页 (文件大小:361K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N60
Power MOSFET
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) <11.5Ω@ VGS=10V, ID=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
www.unisonic.com.tw
1 of 7
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-052.N
1N60
Power MOSFET
ORDERING INFORMATION
Ordering Number
Halogen Free
Pin Assignment
Package
Packing
Lead Free
-
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
1N60G-AA3-R
1N60G-TA3-T
1N60G-TF2-T
1N60G-TF3-T
1N60G-TM3-T
1N60G-TMS-T
1N60G-TMS2-T
1N60G-TMS4-T
1N60G-TN3-R
1N60G-TND-R
1N60G-T60-K
1N60G-T92-B
1N60G-T92-K
D: Drain S: Source
SOT-223
TO-220
Tape Reel
Tube
G
G
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
D
D
1N60L-TA3-T
1N60L-TF2-T
1N60L-TF3-T
1N60L-TM3-T
1N60L-TMS-T
1N60L-TMS2-T
1N60L-TMS4-T
1N60L-TN3-R
1N60L-TND-R
1N60L-T60-K
1N60L-T92-B
1N60L-T92-K
TO-220F2
TO-220F
TO-251
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
Bulk
TO-252D
TO-126
TO-92
Tape Box
Bulk
TO-92
Note: Pin Assignment: G: Gate
MARKING
PACKAGE
MARKING
SOT-223
TO-220
TO-220F
TO-220F2
TO-251
TO-251S2
TO-251S4
TO-252
TO-252D
TO-251S
TO-126
TO-92
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R502-052.N
www.unisonic.com.tw
1N60
Power MOSFET
■
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
±30
1.2
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
ID
1.2
A
IDM
4.8
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
50
mJ
mJ
V/ns
Avalanche Energy
EAR
4.0
Peak Diode Recovery dv/dt (Note 4)
SOT-223
dv/dt
4.5
8
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
28
40
21
Power Dissipation
PD
W
TO-220F
TO-220F2
23
TO-92(TA=25°С)
TO-126
1
12.5
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
150
UNIT
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220/TO-220F
TO-220F2
110
Junction to Ambient
θJA
°С/W
62.5
62.5
140
132
14
TO-92
TO-126
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
4.53
3.13
5.95
5.43
80
Junction to Case
θJc
°С/W
TO-220F
TO-220F2
TO-92
TO-126
10
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R502-052.N
www.unisonic.com.tw
1N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
600
V
10 μA
100 nA
-100 nA
V/℃
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Forward
Reverse
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
9.3 11.5
V
VGS=10V, ID=0.6A
Ω
CISS
COSS
CRSS
120 150 pF
20 25 pF
3.0 4.0 pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
5
25
7
20
60
25
60
ns
ns
ns
ns
Turn-On Rise Time
VDD=300V, ID=1.2A, RG=50Ω
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
25
Total Gate Charge
QG
5.0 6.0 nC
VDS=480V, VGS=10V, ID=1.2A
(Note 2,3)
Gate-Source Charge
QGS
QGD
1.0
2.6
nC
nC
Gate-Drain Charge
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS =1.2A
1.4
1.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Reverse Recovery Time
trr
160
0.3
ns
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R502-052.N
www.unisonic.com.tw
1N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
QW-R502-052.N
www.unisonic.com.tw
1N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R502-052.N
www.unisonic.com.tw
1N60
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R502-052.N
www.unisonic.com.tw
相关型号:
©2020 ICPDF网 联系我们和版权申明