2N70KL-TM3-T [UTC]
N-CHANNEL ENHANCEMENT;型号: | 2N70KL-TM3-T |
厂家: | Unisonic Technologies |
描述: | N-CHANNEL ENHANCEMENT |
文件: | 总7页 (文件大小:351K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N70K-MT
Power MOSFET
2A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N70K-MT is a high voltage MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 5.5Ω@VGS = 10V , ID = 1.0 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
2N70KL-TF3-T
2N70KL-TF1-T
2N70KG-TF3-T
2N70KG-TF1-T
2N70KG-TF2-T
2N70KG-TF3T-T
2N70KG-TM3-T
2N70KG-TMS-T
2N70KG-TN3-R
2N70KG-TND-R
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
Tube
Tube
2N70KL-TF2-T
Tube
2N70KL-TF3T-T
Tube
2N70KL-TM3-T
Tube
2N70KL-TMS-T
TO-251S
TO-252
Tube
2N70KL-TN3-R
Tape Reel
Tape Reel
2N70KL-TND-R
TO-252D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R205-008.B
2N70K-MT
Power MOSFET
MARKING
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2N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
700
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous
2.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
IDM
8.0
A
Avalanche Energy
EAS
100
mJ
V/ns
Peak Diode Recovery dv/dt (Note 4)
TO-220F/TO-220F1
dv/dt
4.5
28
29
30
W
W
W
TO-220F3
Power Dissipation
TO-220F2
PD
TO-251/TO-251S
TO-252/TO-252D
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°С
°С
°С
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=50mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220F/TO-220F1/
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F2/TO-220F3
TO-251/TO-251S
TO-252/TO-252D
TO-220F/TO-220F1
TO-220F3
Junction to Ambient
Junction to Case
θJA
110
°C/W
4.46
4.35
4.24
°C/W
°C/W
°C/W
TO-220F2
θJC
TO-251/TO-251S
TO-252/TO-252D
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2N70K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
700
V
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
10
μA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
3.0
5.0
5.5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID =1.0A
Ω
CISS
COSS
CRSS
258
31
pF
pF
pF
Output Capacitance
VDS =25V, VGS =0V, f =1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
4.6
tD (ON)
tR
tD(OFF)
tF
39.5
38.5
50
ns
ns
Turn-On Rise Time
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
21
ns
Total Gate Charge
QG
10.4
5.3
nC
nC
nC
VDS=50V, ID=1.3A, VGS=10V
(Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
2.0
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
VSD
ISD
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
A
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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2N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
P.W.
D=
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
1
2
BVDSS
E
AS
=
LIAS
2
BVDSS - VDD
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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2N70K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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