2SA1013L-X-T92-K [UTC]
PNP EPITAXIAL SILICON TRANSISTOR;
| 型号： | 2SA1013L-X-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1013
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses
UTC’s advanced technology to provide the customers with high BVCEO
and high DC current gain, etc.
The UTC 2SA1013 is suitable for power switching and color TV
vertical deflection output, etc.
FEATURES
* High BVCEO
* High DC current gain
* Large continuous collector current capability
ORDERING INFORMATION
Ordering Number
Pin assignment
Package
Packing
Lead Free
-
Halogen Free
1
B
E
E
E
E
2
3
E
B
B
B
B
2SA1013G-x-AB3-R
2SA1013G-x-T92-B
2SA1013G-x-T92-K
2SA1013G-x-T9N-B
2SA1013G-x-T9N-K
SOT-89
TO-92
C
C
C
C
C
Tape Reel
Tape Box
Bulk
2SA1013L-x-T92-B
2SA1013L-x-T92-K
2SA1013L-x-T9N-B
2SA1013L-x-T9N-K
TO-92
TO-92NL
TO-92NL
Tape Box
Bulk
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING
SOT-89
TO-92
TO-92NL
UTC
2SA1013
L: Lead Free
G: Halogen Free
Data Code
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R208-049.D
2SA1013
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-160
-160
-6
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
-1
A
Base Current
IB
-0.5
A
SOT-89
500
W
W
°C
°C
Collector Power Dissipation
PC
TO-92/TO-92NL
900
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=-150V, IE=0
MIN TYP MAX UNIT
-1.0 µA
Collector Cut-Off Current
Emitter Cut-Off Current
IEBO
-1.0 µA
VEB=-6V, IC=0
V(BR)CEO
hFE
VCE(sat)
VBE
-160
60
V
Collector-Emitter Breakdown Voltage
DC Current Gain
IC=-10mA, IB=0
VCE=-5V, IC=-200mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-5mA
VCE=-5V, IC=-200mA
VCB=-10V, f=1MHz, IE=0
320
-1.5
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-0.45
15
-0.75
fT
50
MHz
pF
Transition Frequency
Cob
35
Collector Output Capacitance
CLASSIFICATION OF hFE
RANK
R
O
P
RANGE
60~120
100~200
160~320
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R208-049.D
www.unisonic.com.tw
2SA1013
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R208-049.D
www.unisonic.com.tw
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