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2SA1627AG-T60-K [UTC]

Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, HALOGEN FREE PACKAGE-3;
2SA1627AG-T60-K
型号： 2SA1627AG-T60-K
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, HALOGEN FREE PACKAGE-3

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UNISONIC TECHNOLOGIES CO., LTD  
2SA1627A  
Preliminary PNP EPITAXIAL SILICON TRANSISTOR  
PNP EPITAXIAL SILICON  
TRANSISTOR  
1
TO-126C  
„
DESCRIPTION  
The UTC 2SA1627A is designed for general purpose  
amplifier and high speed switching applications.  
„
FEATURES  
* High voltage  
* Low collector saturation voltage.  
* High-speed switching  
1
TO-126  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
E
E
2
C
C
3
B
B
2SA1627AL-T60-K  
2SA1627AL-T6C-K  
2SA1627AG-T60-K  
2SA1627AG-T6C-K  
TO-126  
Bulk  
Bulk  
TO-126C  
www.unisonic.com.tw  
Copyright © 2011 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R217-004.B  
2SA1627A  
Preliminary PNP EPITAXIAL SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
RATINGS  
-600  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-600  
V
-7.0  
V
Collector Power Dissipation  
Collector Current (DC)  
Collector Current (Pulse)  
Junction Temperature  
Storage Temperature  
PC  
1.0  
W
A
IC  
-1.0  
ICP (Note 1)  
TJ  
-2.0  
A
150  
°C  
°C  
TSTG  
-55 ~ +150  
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
1. PW≦10ms, Duty Cycle≦50%  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB= -600V, IE=0  
VEB= -7.0V, IC=0  
MIN TYP MAX UNIT  
Collector Cut-Off Current  
Emitter Cut-Off Current  
DC Current Gain  
-10  
-10  
µA  
µA  
IEBO  
hFE1 (Note 2) VCE= -5.0V, IC= -0.1A  
hFE2 (Note 2) VCE= -5.0V, IC= -0.5A  
30  
4
58 120  
19  
DC Current Gain  
VCE(sat)  
-0.28 -1.5  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC= -0.3A, IB= -0.06A  
(Note 2)  
VBE(sat)  
-0.85 -1.2  
IC= -0.3A, IB= -0.06A  
(Note 2)  
Gain Bandwidth Product  
Output Capacitance  
Turn-On Time  
fT  
Cob  
ton  
tstg  
tf  
VCE= -10V, IE=0.1A  
10  
28  
MHz  
pF  
VCB= -10V, IE=0, f=1.0MHz  
42  
50  
0.1 0.5  
3.5 5.0  
0.08 0.5  
µs  
IC=-0.5A, RL=500Ω,  
IB1= -IB2= -0.1A, VCC =-250V  
Storage Time  
µs  
Fall Time  
µs  
Pulsed PW≦350µs,Duty Cycle≦2%  
Note: 2.  
„
CLASSIFICATION OF hFE1  
RANK  
M
L
K
RANGE  
30-60  
40-80  
60-120  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R217-004.B  
www.unisonic.com.tw  
2SA1627A  
Preliminary PNP EPITAXIAL SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Collector and Base Saturation Voltage  
Collector Current vs.  
Base to Emitter Voltage  
vs. Collector Current  
-1.0  
-3.0  
IC=5IB  
VCE=-5.0V  
-0.3  
-0.1  
-1.0  
VBE(sat)  
-0.3  
-0.1  
-0.03  
-0.01  
VCE(sat)  
-0.03  
-0.003  
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6  
Base to Emitter Voltage, VBE (V)  
-0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5  
Collector Current, IC (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R217-004.B  
www.unisonic.com.tw  
2SA1627A  
Preliminary PNP EPITAXIAL SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
Gain Bandwidth Product vs.  
Turn Off Time vs. Collector Current  
Collector Current  
100  
50  
IC/IB=5  
VCE=-250V  
IB1=IB2  
5.0  
VCB=-5.0V  
tstg  
2.0  
1.0  
20  
10  
0.5  
5.0  
0.2  
0.1  
2.0  
1.0  
tf  
-0.3  
-0.03  
-0.1  
-1.0  
-3.0  
-0.002 -0.005-0.01-0.02 -0.05 -0.1 -0.2  
Collector Current, IC (A)  
Collector Current, IC (mA)  
Output Capacitance vs.  
Collector to Base Voltage  
Collector Power Dissipation  
vs. Ambient Temperature  
200  
100  
1.2  
IE=0  
Free Air  
1.0  
0.8  
50  
0.6  
0.4  
20  
10  
5.0  
0.2  
0
2.0  
-3.0  
-10  
-30  
-100  
-300  
0
25  
50  
75  
100 125 150  
Collector to Base Voltage, VCB (V)  
Ambient Temperature, Ta (℃)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R217-004.B  
www.unisonic.com.tw  

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