2SA1943G-X-T3L-T [UTC]
POWER AMPLIFIER APPLICATIONS; 功率放大器的应用
| 型号： | 2SA1943G-X-T3L-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | POWER AMPLIFIER APPLICATIONS |
| 文件： | 总4页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1943
PNP SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Complementary to UTC 2SC5200
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage
1
TO-3PL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-3PL
Lead Free
Halogen Free
1
2
3
2SA1943L-x-T3L-T
2SA1943G-x-T3L-T
B
C
E
Tube
2SA1943L-x-T3L-T
(1) T: Tube
(1)Packing Type
(2) T3L: TO-3PL
(2)Package Type
(3)Rank
(3) x: refer to Classification of hFE
(4) L: Lead Free , G: Halogen Free
(4)Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R214-006,C
2SA1943
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-230
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-230
V
-5
V
Collector Current
-15
A
Base Current
IB
-1.5
A
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
PC
150
W
℃
℃
TJ
+150
-65 ~ +125
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB = -230V, IE=0
VEB= -5V, IC=0
MIN TYP MAX UNIT
Collector Cut-Off Current
-5.0
-5.0
μA
μA
V
Emitter Cut-Off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR) CEO IC= -50mA, IB=0
-230
55
hFE
hFE
VCE= -5V, IC= -1A
VCE= -5V, IC= -7A
160
DC Current Gain
35
60
-1.5
-1.0
30
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
VCE (SAT) IC= -8A, IB= -0.8A
-3.0
-1.5
V
V
VBE
fT
VCE= -5V, IC= -7A
Transition Frequency
VCE= -5V, IC= -1A
MHz
pF
Collector Output Capacitance
Cob
VCB= -10V, IE=0, f=1MHz
360
CLASSIFICATION OF hFE
Rank
R
O
Range
55 ~ 110
80 ~ 160
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R214-006,C
www.unisonic.com.tw
2SA1943
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Transient Thermal Resistance
vs. Pulse Width
CURVES SHOULD BE
APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE
PULSE)
Safe Operating Area
-50
-30
10
1
IC MAX. (PULSED)
1ms
IC MAX.
(CONTINUOUS)
10ms
-10
100ms
-5
-3
DC
OPERATION
C
TC =100
-1
INFINTE HEAT SINK
-0.5
-0.3
0.1
**SINGLE NONREPETITIVE
C
PULSE TC = 25
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
-0.1
VCEO MAX.
-0.05
-0.03
0.01
-3
-100 -300 -1000
-10 -30
0.001 0.01 0.1
1
10 100 1000
Collector-Emitter Voltage, VCE (V)
Pulse Width, tw (s)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R214-006,C
www.unisonic.com.tw
2SA1943
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R214-006,C
www.unisonic.com.tw
相关型号：
2SA1943L-R-T3L-T
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3PL, 3 PIN
UTC
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