2SB824-Q-AB3-R [UTC]
Small Signal Bipolar Transistor;型号: | 2SB824-Q-AB3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor |
文件: | 总5页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB824
PNP SILICON TRANSISTOR
PNP PLANAR SILICON
TRANSISTOR
1
FEATURES
* Low collector-to-emitter saturation voltage:
VCE(SAT)=-0.4V max/IC=-3A, IB=-0.3A
SOT-89
*Pb-free plating product number: 2SB824L
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-89
Normal
Lead Free Plating
2SB824L-x-AB3-R
1
2
3
2SB824-x-AB3-R
B
C
E
Tape Reel
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5
QW-R208-042.A
2SB824
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
-60
-50
V
-6
-5
V
A
Collector Current (Pulse)
Collector Dissipation
ICP
-9
A
PC
500
mW
℃
℃
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS
MIN
-60
-50
-6
TYP MAX UNIT
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC =-1mA, IE=0
BVCEO IC=-1mA, RBE =∞
BVEBO IC =0, IE=-1mA
V
V
V
ICBO
IEBO
hFE1
hFE2
fT
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-1A
-0.1
-0.1
360
mA
mA
Emitter Cut-Off Current
70
30
DC Current Gain
VCE=-2V, IC=-3A
VCE =-5V, IC =-1A
VCB =-10V, f=1MHz
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
30
MHZ
pF
V
Cob
100
VCE(SAT) IC=-3A, IB=-0.3A
-0.4
tON
tSTG
tF
See specified test circuit
0.1
1.4
0.2
µs
Storage Time
See specified test circuit
See specified test circuit
µs
Fall Time
µs
CLASSIFICATION of hFE1
RANK
Q
R
S
RANGE
70-140
100-200
180-360
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
www.unisonic.com.tw
QW-R208-042.A
2SB824
PNP SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
IB1
1
OUT
IN
PW=20µs
tr×tf≤15ns
IB2
100
10
50
1µ
1µ
(For NPN, the polarity is
reversed)
10IB1= 10IB2=IC=-2A
-5V
20V
Unit (resistance: Ω,capacitance: F)
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
www.unisonic.com.tw
QW-R208-042.A
2SB824
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain vs. Collector Current
VCE=-2V
1000
10
IC/IB=10
7
5
5
3
2
3
2
1.0
25℃
5
3
2
100
-20℃
7
5
0.1
-20℃
25℃
3
2
5
3
2
10
0.01
3
5
2
3
2
3
2
0.012
0.1
1.0
10
5
5
2
2
3
5
2
2
3
5
3
5
0.1
1.0
10
Collector Current, -IC (A)
Collector Current, -IC (A)
Collector-Emitter Saturation Voltage vs.
Collector Current
Base-Emitter Saturation Voltage vs.
Collector Current
10
10
IC/IB=20
7
5
3
2
5
3
2
1.0
5
3
2
IC/IB=10
IC/IB=20
1.0
-20℃
25℃
0.1
7
5
5
3
2
3
2
0.01
2
3
5
2
3
5
2
3
5
2
2
3
5
2
3
5
2
3
5
2
0.1
1.0
10
0.1
1.0
10
Collector Current, -IC (A)
Collector Current, -IC (A)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R208-042.A
www.unisonic.com.tw
2SB824
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
www.unisonic.com.tw
QW-R208-042.A
相关型号:
2SB824G-Q-AB3-R
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3
UTC
2SB824L-Q-T60-K
Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, LEAD FREE PACKAGE-3
UTC
©2020 ICPDF网 联系我们和版权申明