2SC3149-K-T60-K [UTC]
Transistor;型号: | 2SC3149-K-T60-K |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总2页 (文件大小:124K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC3149
Preliminary
NPN SILICON TRANSISTOR
NPN TEANSISTOR
DESCRIPTION
The UTC 2SC3149 are series of NPN silicon planar transistor,
and its suited to be used in power amplifier applications.
FEATURES
* Suit for power amplifier applications
Lead-free:
2SC3149L
Halogen-free: 2SC3149G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-126
Packing
Bulk
Normal
Lead Free
Halogen Free
1
2
3
2SC3149-T60-K
2SC3149L-T60-K
2SC3149G-T60-K
B
C
E
2SC3149L-T60-K
(1)Packing Type
(1) K: Bulk
(2) T60: TO-126
(2)Package Type
(3)Lead Plating
(3) G: Halogen Free, L: Lead Free,
Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 2
QW-R204-024.a
2SC3149
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-emitter voltage
Emitter-Base Voltage
Collector Current
1200
800
7
V
V
0.5
2
A
W
Collector Dissipation
Junction Temperature
Storage Temperature
PC
TJ
+150
℃
℃
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=1mA, IE=0A
MIN TYP MAX UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
1200
V
IC=5mA, IB=0A
IE=1mA, IC=0A
800
V
7
μA
μA
Collector Cutoff Current
Emitter Cutoff Current
V
CB=800V, IE=0A
EB=5V, IC=0A
10
10
IEBO
V
DC Current Gain (Note)
hFE
IC=100mA, VCE=5V
IC=200mA, IB=40mA
IC=200mA, IB=40mA
IC=100mA, VCE=10V
10
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
V
V
0.8
1.5
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
fT
MHz
pF
μs
15
30
Cob
tON
tSTG
VCB=10V, f=1MHz
1.0
3.0
0.7
IC=1A, IB1=0.2A, IB2=-0.4A,
RL=400Ω, VCC=400V
Storage Time
μs
Fall Time
tF
μs
Note: Pulse test: Pulse width=300μs, Duty Cycle≦2%
CLASSIFICATION OF hFE
RANK
K
L
M
RANGE
10 ~ 20
15 ~ 30
20 ~ 40
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R204-024.a
www.unisonic.com.tw
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