2SC3834G-T3P-T [UTC]
Power Bipolar Transistor,;
| 型号： | 2SC3834G-T3P-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC3834
NPN SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
DESCRIPTION
The UTC 2SC3834 is an epitaxial planar type NPN silicon
transistor.
FEATURES
* Humidifier, DC-DC converter, and general purpose
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free Plating
2SC3834L-TA3-T
2SC3834L-TF3-T
2SC3834L-T3P-T
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
2SC3834G-TA3-T
2SC3834G-TF3-T
2SC3834G-T3P-T
TO-220
TO-220F
TO-3P
Tube
Tube
Tube
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R203-026.F
2SC3834
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-emitter voltage
Emitter-Base Voltage
Collector Current (Pulse)
Base Current
200
120
8
V
V
A
7
A
IB
3
60
27
65
W
W
W
TO-220
TO-220F
TO-3P
Collector Dissipation (TC=25C)
PC
Junction Temperature
Storage Temperature
TJ
+150
C
C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
IC= 50mA
MIN TYP MAX UNIT
V
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
120
μA
μA
VCB=200V, IE=0A
100
100
220
0.5
IEBO
VEB=8V, IC=0A
DC Current Gain (Note)
hFE
VCE=4V, IC=3A
70
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT)
VBE(SAT)
fT
V
V
IC=3A, IB=0.3A
IC=3A, IB=0.3A
1.2
MHz
pF
IE=-0.5mA, VCE=12V, f=100MHz
VCB=10 V, IE=0A, f=1MHz
30
C
110
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-026.F
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2SC3834
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
V
CE(SAT)-IB Characteristics (Typical)
IC-VCE Characteristics (Typical)
200mA
150mA
7
6
250mA
300mA
2
1
0
100mA
5
4
3
60mA
40mA
5A
20mA
IC=1A
3A
2
1
0
IB=10mA
0
1
2
3
4
0.005 0.01
0.05 0.1
0.5
1
Collector-Emitter Voltage,VCE (V)
Base Current,IB (A)
fT-IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
100ms
30
20
20
VCE=12V
10
5
10ms
1
Without
Healstink
Natural
0.5
10
0
Cooling
0.1
0.05
-0.01
-0.05 -0.1
-0.5 -1
-5
5
10
50
120 200
Collect-Emitter Voltage,VCE (V)
Emitter Current,IE (A)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-026.F
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2SC3834
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
PC-TA Derating
50
40
30
20
10
Without Heatsink
2
0
0
25
50
75
100 125
150
Ambient Temperature,TA (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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