2SC3834 [UTC]
SWITCH NPN TRANSISTOR; 开关NPN晶体管
| 型号： | 2SC3834 |
| 厂家： | 
Unisonic Technologies |
| 描述： | SWITCH NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SC3834
NPNEPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
DESCRIPTION
The UTC 2SC3834 is an epitaxial planar type NPN silicon
transistor.
APLLICATION
1
*Humidifier,DC-DC converter,and general purpose.
TO-220
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IB
RATING
UNIT
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
200
120
8
3
Base Current
Collector Current (PULSE)
Collector Power Dissipation( Tc=25°C )
Junction Temperature
Storage Temperature
Ic
Pc
Tj
TSTG
7
50
150
A
W
°C
°C
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
Ic= 50mA
MIN TYP MAX UNIT
120
V
μA
μA
VCB=200V, IE=0
VEB= 8V, Ic =0
VCE= 4V,Ic= 3A
100
100
220
0.5
IEBO
hFE
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
70
VCE(sat) Ic=3A ,IB=0.3A
V
V
VBE(sat)
fT
Ic=3A ,IB=0.3A
VCE=12V,IE=-0.5mA,f=100MHz
VCB= 10V, IE= 0 A,f=1MHz
1.2
30
110
MHz
pF
Output Capacitance
Cob
TYPE SWITCHING CHARACTERISTCS (Common Emitter)
Ton(μA) Tstg(μA) Tf (μA)
VBB2(V)
IB2(A)
Vcc(V)
RL(Ω)
Ic (A)
VBB1(V)
IB1(A)
0.5(max)
50
16.7
3
10
-5
0.3
-0.6
0.5(max) 3.0(max)
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-026,A
UTC2SC3834
NPNEPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVES
IC-VBE Temperature
Characteristics (Typical)
Ic-VCE Characteristics(Typical)
VCE(sat)-IB Characteristics (Typical)
7
6
5
4
3
2
1
0
7
6
2
5
4
3
2
1
0
I
B=10mA
1
0
0.5
1
0.005 0.01
0.05 0.1
0
0.5
1.0 1.1
0
1
2
3
4
Base Current IB(A)
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
HFE-Ic Temperature
Characteristics (Typical)
θj-a–t Characteristics
HFE-IC Characteristics (Typical)
4
1
200
300
VCE=4V
VCE=4V
Typ
100
50
100
50
0.5
0.3
20
20
0.01
0.0
0.
1
1000
100
10
1
0.5
1
5 7
0.05 0.1
0.5
1
5
7
2
Time t(ms)
Collector Current IC(A)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
Pc–Ta Derating
fT–IE Characteristics (Typical)
20
10
5
50
40
30
20
VCE=12V
30
20
1
0.5
10
0
Without Healstink
Natural Cooling
10
0.1
WithoutHeatsink
50
2
0
0.05
-0.5 -1
-5
-0.01
-0.05 -0.1
200
5
10
50
120
0
100
125
150
25
75
Emitter Current IE(A)
Collect-Emitter Voltage VcE(V)
Ambient Temperature Ta(℃)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-026,A
UTC2SC3834
NPNEPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-026,A
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