2SC5027EL-N-TF3-F-T [UTC]
Transistor;型号: | 2SC5027EL-N-TF3-F-T |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总4页 (文件大小:48K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC5027E
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY
.
ꢀ FEATURES
* High Speed Switching
* Wide SOA
1
TO-220F
*Pb-free plating product number: 2SC5027EL
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Package
TO-220F
Packing
Tube
Normal
Lead Free Plating
1
2
3
2SC5027E-x-TF3-F-T
2SC5027EL-x-TF3-F-T
B
C
E
Note: x: Rank, refer to Classification of hFE1
.
2SC5027EL-x-TF3-F-T
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(1) T: Tube
(2) refer to Pin Assignment
(3) TF3: TO-220F
(4) x: refer to Classification of hFE1
(5) L: Lead Free Plating, Blank: Pb/Sn
(5)Lead Plating
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2SC5027E
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Tc = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Collector Current (Pulse)
Base Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
750
700
V
7
V
3
10
A
ICP
A
IB
1.5
A
Power Dissipation
PD
50
W
℃
℃
Junction Temperature
Storage Temperature
TJ
150
TSTG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
750
700
7
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCBO(BR) IC=1mA, IE=0
VEBO(BR) IC=5mA, IB=0
VEBO(BR) IE=1mA, IC=0
V
V
V
IC=1.5A, IB1= -IB2=0.3A
Collector-Emitter sustaining Voltage
VCEO(SUS)
700
V
L=2mH, Clamped
VCB=750V, IE=0
VEB=5V, IC=0
μA
μA
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
hFE1
hFE 2
10
10
40
VCE=5V, IC=0.2A
VCE=5V, IC=1A
10
8
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE (SAT) IC=1.5A, IB=0.3A
VBE (SAT) IC=1.5A, IB=0.3A
2
V
V
1.5
Cob
fT
VCB=10V, f=1MHz, IE=0
60
15
pF
Current Gain Bandwidth Product
Turn ON Time
VCE=10V, IC=0.2A
MHz
μs
μs
μs
tON
tS
VCC=400V
IC=5IB1= -2.5IB2=2A
RL=200Ω
0.5
3
Storage Time
Fall Time
tF
0.3
ꢀ
CLASSIFICATION of hFE1
CLASSIFICATION
RANGE
N
R
O
10 ~ 20
15 ~ 30
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
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QW-R219-008,A
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2SC5027E
NPN EPITAXIAL SILICON TRANSISTOR
■ TYPICAL CHARACTERISTICS
DC Current Gain
1000
Static Characteristic
4.0
VCE=5V
3.6
3.2
2.8
100
10
I
B
=250 mA
=200 mA
=150 mA
=100 mA
=80mA
=60mA
=50mA
=40mA
=30mA
=20mA
2.4
2.0
1.6
IB
IB
IB
IB
IB
IB
IB
1.2
IB
IB
0.8
0.4
IB
=10mA
=0mA
IB
0.1
1
1
0.01
0.0
1
2
10
0
3
4
5
6
7
8
9
10
Collectoer-Emitter Voltage, VCE (V)
Collector Current, I (A)
C
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Collector-Emitter Saturation Voltage
Ic=5I
4.0
10
1
VCE=5V
B
3.5
3.0
2.5
2.0
1.5
1.0
0.1
0.5
0.0
0.1
1
0.01
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
Collector Curren,t IC (A)
Switching Time
Base-Emitter Voltage, VBE (V)
Safe Operating Area
10
1
100
10
Vcc =400 V
5.IB1= - 2.5.IB2=Ic
IcMAX.(Pulse)
IcMAX.(Continuous )
1
0
1
0
m
1
s
0
μ
s
m
s
1
D
C
0.1
0.1
0.01
1E-s
0.01
0.1
1
10
1
10
100
1000
10000
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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2SC5027E
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Reverse Operating Area
Power Derating
80
100
10
IB2=-0.3A
70
60
50
40
1
30
20
0.
1
10
0
100
0.0
1
1000
10000
150 175
(℃)
10
0
25
50
75
100 125
Collector-Emitter Voltage, VCE (V)
Case Temperature, T
C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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