2SC5027EL-R-TF2-T [UTC]
Power Bipolar Transistor;
| 型号： | 2SC5027EL-R-TF2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC5027E
NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY TRANSISTOR
.
FEATURES
* High Speed Switching
* Wide SOA
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
2SC5027EL-x-TA3-T
2SC5027EL-x-TF2-T
2SC5027EL-x-TF3-T
2SC5027EL-x-TA3-T
2SC5027EL-x-TF2-T
2SC5027EL-x-TF3-T
TO-220
TO-220F2
TO-220F
Tube
Tube
Tube
www.unisonic.com.tw
1 of 4
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R203-030.C
2SC5027E
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TC = 25℃)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
750
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Collector Current (Pulse)
Base Current
700
V
7
V
3
10
A
ICP
A
IB
1.5
A
TO-220/TO-220F
TO-220F2
50
Power Dissipation
PD
W
52
℃
℃
Junction Temperature
Storage Temperature
TJ
150
TSTG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC=1mA, IE=0
MIN
750
700
7
TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
V
V
BVCEO
IC=5mA, IB=0
BVEBO
IE=1mA, IC=0
IC=1.5A, IB1= -IB2=0.3A
L=2mH, Clamped
VCB=750V, IE=0
VEB=5V, IC=0
Collector-Emitter sustaining Voltage
VCEO(SUS)
700
V
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
hFE1
hFE 2
10
10
40
μA
μA
VCE=5V, IC=0.2A
VCE=5V, IC=1A
10
8
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE (SAT) IC=1.5A, IB=0.3A
VBE (SAT) IC=1.5A, IB=0.3A
2
V
V
1.5
COB
fT
VCB=10V, f=1MHz, IE=0
60
15
pF
MHz
μs
Current Gain Bandwidth Product
Turn ON Time
VCE=10V, IC=0.2A
tON
tS
0.5
3
VCC=400V
IC=5IB1= -2.5IB2=2A
RL=200Ω
Storage Time
μs
Fall Time
tF
0.3
μs
CLASSIFICATION of hFE1
CLASSIFICATION
RANGE
N
R
O
10 ~ 20
15 ~ 30
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R203-030.C
www.unisonic.com.tw
2SC5027E
NPN SILICON TRANSISTOR
■ TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R203-030.C
www.unisonic.com.tw
2SC5027E
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Reverse Operating Area
Power Derating
80
100
10
IB2=-0.3A
70
60
50
40
1
30
20
0.
1
10
0
100
0.0
1
1000
10000
150 175
Case Temperature, TC (℃)
10
0
100 125
25
50
75
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R203-030.C
www.unisonic.com.tw
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