2SD880Y [UTC]
Transistor;
| 型号： | 2SD880Y |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD880
NPNEPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power
amplifier applications.
FEATURE
*High DC Current Gain:
hFE=300(Max.)(VCE=5V,IC=0.5A)
*Low Saturation Voltage:
VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
*High Power Dissipation:
1
PC=30W (Ta=25°C)
*Complementary to 2SB834
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
*Pb-free plating product number: 2SD880L
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Maximum Voltages and currents
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VALUE
UNIT
VCBO
VCEO
VEBO
IC
60
60
7
3
0.5
V
V
V
A
A
Base Current
IB
Maximum Power Dissipation
Total Power Dissipation
Maximum Temperature
Junction Temperature Range
Storage Temperature Range
PD
30
W
TOPR
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IC=50mA,IE=0
VCB=60V,IE=0
60
V
µA
µA
V
100
100
1
Emitter Cut-Off Current
IEBO
VEB=7V,IC=0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
VCE(SAT)
VBE(ON)
hFE
IC=3A, IB=300mA
VCE=5V, IC=500mA
IC=500mA, VCE=5V
VCE =5V, IC =500mA
1
V
60
300
Current gain bandwidth product
fT
3
MHZ
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R203-013,B
UTC2SD880
NPNEPITAXIAL PLANAR TRANSISTOR
CLASSIFICATION of hFE
RANK
O
Y
GR
RANGE
60-120
100-200
150-300
TYPICAL CHARACTERISTICS
Ic-Vce
3.0
2.5
POWER DERATING
40
90
80
60
70
50
35
40
30
20
30
25
20
15
10
5
2.0
1.5
1.0
IB = 10mA
0.5
0
0
125
150
0
25
50
75
100
TC = 25℃
5.0
TEMPERATURE, TC (℃)
1.0
2.0
3.0
4.0
6.0
COLLECTOR-EMITTER VOLTAGE, V CE (V)
DC CURRENT GAIN
Ic-Vbe
3.0
2.5
2.0
VCE = 5.0V
VCE = 5.0V
300
TC = 100℃
25
100
-25
TC = 100℃ 25
1.5
1.0
0.5
-25
50
30
10
0
0.2
0.4
BASE-EMITTER VOLTAGE, VBE (V)
0.6
0.8
1.2
1.0
1.4
1.6
5
10
2
20
100 200
COLLECTOR CURRENT, IC (mA)
50
500
3k
1k
ACTIVE-REGION SAFE OPERATING AREA (SOA)
100ms
VCE(sat)-IC
1.0
0.5
10
COMMON EMITTER
IC/IB = 10
10ms
5.0
1ms
dc
2.0
1.0
0.5
0.2
TC = 100℃
0.1
Bonding Wire Limit
Second Breakdown Limit
Thermally Limited
0.05
25℃
at TC = 25℃ (Single Pulse)
0.2
0.1
-25℃
0.02
2
3k
1.0
5
10
20
50 100 200
500 1k
2k
20
50 70 100
10
2.0
5.0
7.0
COLLECTOR CURRENT, IC (mA)
COLLECTOR EMITTER VOLTAGE, VCE (VOLTS)
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R203-013,B
UTC2SD880
NPNEPITAXIAL PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R203-013,B
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