30N06-TF3-R [UTC]

30 Amps, 60 Volts N-CHANNEL POWER MOSFET; 30安培， 60伏特N沟道功率MOSFET


型号：	30N06-TF3-R
厂家：	Unisonic Technologies
描述：	30 Amps, 60 Volts N-CHANNEL POWER MOSFET 30安培， 60伏特N沟道功率MOSFET
文件：	总8页 (文件大小：155K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

30N06

MOSFET

30 Amps, 60 Volts

N-CHANNEL POWER MOSFET

ꢀ

DESCRIPTION

TO-220

The UTC 30N06 is a low voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and excellent avalanche

characteristics. This power MOSFET is usually used at automotive

applications in power supplies, high efficient DC to DC converters

and battery operated products.

TO-220F

ꢀ

FEATURES

* R_DS(ON)= 40mΩ@V_GS= 10 V

*Pb-free plating product number: 30N06L

* Ultra low gate charge ( typical 20 nC )

* Low reverse transfer Capacitance ( C_RSS= typical 80 pF )

* Fast switching capability

* 100% avalanche energy specified

* Improved dv/dt capability

ꢀ

SYMBOL

2.Drain

1.Gate

3.Source

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

30N06-TA3-T

30N06-TF3-T

30N06L-TA3-T

30N06L-TF3-T

TO-220

Tube

TO-220F

Note: Pin Assignment: G: Gate D: Drain S: Source

30N06L-TA3-T

(1) T: Tube, R: Tape Reel

(1)Packing Type

(2)Package Type

(3)Lead Plating

(2) TA3: TO-220, TF3: TO-220F

(3) L: Lead Free Plating, Blank: Pb/Sn

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30N06

MOSFET

ꢀ

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate to Source Voltage

±20

V_GSS

T_C= 25℃

Continuous Drain Current

I_D

T_C= 100℃

21.3

Pulsed Drain Current (Note 1)

I_DM

E_AS

120

Avalanche Energy, Single Pulsed (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)

Total Power Dissipation (T_C= 25℃)

Derating Factor Above 25℃

300

V/ns

E_AR

dv/dt

7.5

P_D

0.53

W/℃

℃

Operation Junction Temperature

Storage Temperature

T_J

-55 ~ +150

T_STG

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

THERMAL DATA

PARAMETER

SYMBOL

θ_JC

MIN

TYP

0.5

MAX

1.8

UNIT

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

θ_CS

Thermal Resistance, Junction-to-Ambient

θ_JA

62.5

ꢀ

ELECTRICAL CHARACTERISTICS (T_C= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS= 0 V, I_D= 250 µA

V_DS= 60 V, V_GS= 0 V

µA

Drain-Source Leakage Current

V_DS= 48 V, V_GS= 0 V, T_J= 150℃

V_GS= 20V, V_DS= 0 V

Gate-Source Leakage

Current

Forward

Reverse

100 nA

-100 nA

I_GSS

V_GS= -20V, V_DS= 0 V

Breakdown Voltage Temperature

Coefficient

△BV_DSS/△T_J

I_D= 250 µA, Referenced to 25℃

0.06

V/℃

On Characteristics

Gate Threshold Voltage

Static Drain-Source On-State

Resistance

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 15 A

2.0

4.0

mΩ

Dynamic Characteristics

Input Capacitance

C_ISS

C_OSS

C_RSS

800

300

V_GS= 0 V, V_DS= 25 V,f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DD= 30V, I_D=15 A, V_GS=10V

(Note 4, 5)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

V_DS= 60V, V_GS= 10 V, I_D= 24A

(Note 4, 5)

Gate-Source Charge

Gate-Drain Charge (Miller Charge)

Q_GS

Q_GD

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30N06

MOSFET

ꢀ

ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Source-Drain Diode Ratings and Characteristics

Diode Forward Voltage

V_SD

I_S

I_S= 30A, V_GS= 0 V

1.4

Integral Reverse p-n Junction Diode in

Maximum Continuous Drain-Source

Diode Forward Current

the MOSFET

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

120

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_S= 30A, V_GS= 0 V

dI_F/ dt = 100 A/µs (Note4)

Q_RR

µC

Note 1. Repeativity rating: pulse width limited by junction temperature

2. L=19.5mH, I_AS=30A, R_G=20Ω, Starting T_J=25℃

3. I_SD≤50A, di/dt≤300A/µs, V_DD≤BV_DSS, Starting T_J=25℃

4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%

5. Essentially independent of operating temperature.

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30N06

MOSFET

ꢀ

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS=

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

(D.U.T.)

V_DD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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30N06

MOSFET

ꢀ

TEST CIRCUITS AND WAVEFORMS (Cont.)

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

10V

t_{D(ON )}

t_D(OFF)

Pulse Width ≤ 1μs

Duty Factor ≤0.1%

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0.3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_G

1mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

R_G

V_DD

10V

D.U.T.

t_p

I_AS

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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30N06

MOSFET

ꢀ

TYPICAL CHARACTERISTICS

Transfer Characteristics

On-State Characteristics

Top: 15V

10 V

8 V

℃

10²

10¹

7 V

6 V

5 .5V

10²

10¹

Bottorm : 4.5V

4.5V

℃

Note:

1. V_DS=25V

2. 20µs Pulse Test

10⁰

10¹

Drain-Source Voltage, V_DS(V)

10^-1

10⁰

9 10

Gate-Source Voltage, V_GS(V)

Reverse Drain Current vs. Allowable Case

Temperature

On-Resistance Variation vs. Drain Current and

Gate Voltage

100

10²

150℃

V_GS=10V

10¹

25℃

V_GS=20V

*Note:

1. V_GS=0V

2. 250µs Test

0.0

10⁰

80 100 120

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Source-Drain Voltage, V_SD(V)

Drain Current, I_D(A)

Capacitance Characteristics

(Non-Repetitive)

Gate Charge Characteristics

2000

1500

C_iss=C_gs+C_gd(C_ds=shorted)

_oss=C_ds+C_gd

C_rss=C_gd

V_DS=30V

C_oss

*Note:

1. V_GS=0V

2. f = 1MHz

V_DS=48V

iss

1000

500

C_rss

*Note: I_D=30A

0.1

Total Gate Charge, Q_G(nC)

Drain-Source Voltage, V_DC(V)

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30N06

MOSFET

ꢀ

TYPICAL CHARACTERISTICS(Cont.)

Breakdown Voltage Variation vs. Junction

Temperature

On-Resistance Variation vs.

Junction Temperature

3.0

2.5

2.0

1.5

1.0

1.2

1.1

1.0

*Note:

1. V_GS=0V

2. I_D=250µA

*Note:

1. V_GS=10V

2. I_D=15A

0.9

0.8

0.5

0.0

200

-100 -50

50 100 150

-50

100

150

Junction Temperature, T_J(℃)

Maximum Drain Current vs. Case Temperature

Maximum Safe Operating

Operation in This

Area by R_{DS (ON)}

100

100µs

10ms

1ms

*Note:

1. T_c=25℃

2. T_J=150℃

3.Single Pulse

0.1

150

100

125

100

1000

Drain-Source Voltage, V_DS(V)

Case Temperature, T_C(℃)

Transient Thermal Response Curve

D=0.5

0.2

0.1

0.05

0.02

*Note:

0.01

Z_θJC(t) = 0.88℃/W Max.

0.01

2. Duty Factor , D=t1/t2

Single pulse

3. T_J-T_C=P_DM×Z_θJC(t )

1E-5 1E-4 1E-3 0.01

0.1

Square Wave Pulse Duration, t₁(sec)

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30N06

MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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30N06-TF3-R [UTC]

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