3N90L-TF3-T [UTC]
3 Amps, 900 Volts N-CHANNEL POWER MOSFET; 3安培， 900伏特N沟道功率MOSFET
| 型号： | 3N90L-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 3 Amps, 900 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N90
Power MOSFET
3 Amps, 900 Volts N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N90 provides excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
FEATURES
* RDS(ON)=4.1Ω @VGS=10 V
* Ultra Low Gate Charge ( typical 22.7 nC )
* Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
3N90L-TA3-T
3N90L-TF3-T
3N90L-TQ2-T
3N90L-TQ2-R
3N90G-TA3-T
3N90G-TF3-T
3N90G-TQ2-T
3N90G-TQ2-R
TO-220
TO-220F
TO-263
TO-263
G
G
G
G
D
D
D
D
S
Tube
Tube
S
S
S
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-290.A
3N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VDGR
VGSS
BVGSO
VISO
RATINGS
900
900
±30
30(MIN)
2500
3
UNIT
V
Drain-Source Voltage (VGS=0V)
Drain-Gate Voltage (RG=20kΩ)
Gate-Source Voltage
V
V
Gate-Source Breakdown Voltage (IGS=±1mA)
Insulation Withstand Voltage (DC)
Avalanche Current (Note 2)
V
TO-220F
V
IAR
A
Continuous Drain Current
ID
3
A
Pulsed Drain Current
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
180
4.5
mJ
V/ns
dv/dt
TO-220/ TO-263
TO-220F
90
Power Dissipation
PD
W
25
Junction Temperature
Storage Temperature
TJ
+150
°C
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. starting TJ=25 °C, ID=IAR, VDD=50V
4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX)
.
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
62.5
1.38
5
UNIT
°C/W
TO-220/ TO-263
TO-220F
Junction to Ambient
θJA
TO-220/ TO-263
TO-220F
Junction to Case
θJC
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
900
V
VDS=900V, VGS=0V
VGS=±30V, VDS=0V
1
μA
IGSS
±10 μA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
3
3.75 4.5
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
4.1 4.8
2.1
CISS
COSS
590
63
pF
pF
pF
pF
VDS=25V, VGS=0V, f=1MHz
VGS=0V, VDS=0V~400V
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
CRSS
13
COSS(EQ)
34
tD(ON)
tR
tD(OFF)
tF
VDD=450V, ID=1.5 A, RG=4.7Ω
18
7
ns
ns
V
GS=10V
VDD=720V, ID=1.5 A, RG=4.7Ω
GS=10V
Turn-On Rise Time
Turn-Off Delay Time
45
ns
V
Turn-Off Fall Time
18
ns
Total Gate Charge
QG
22.7
4.2
12
nC
nC
nC
VDD=720V, ID=3A, VGS=10V
Gate-Source Charge
QGS
QDD
Gate-Drain Charge
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QW-R502-290.A
3N90
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Diode Forward Voltage(Note 1)
Source-Drain Current
VSD
ISD
ISD=3A ,VGS=0V
1.6
3
V
A
Source-Drain Current (Pulsed)
Reverse Recovery Current
ISDM
IRRM
tRR
12
A
8.7
510
2.2
A
I
V
SD=3A, di/dt=100A/μs,
DD=100V, TJ=25°C
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: 1.Pulse width=300μs, Duty cycle≦1.5%
ns
nC
QRR
Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS
.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-290.A
3N90
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-290.A
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3N90
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-290.A
3N90
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
300
250
200
150
100
50
150
100
50
0
0
0
0
1
200
400
600
800 1000
2
3
4
5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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