4N60G-X-TQ3-T [UTC]
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET; 4安培， 600/650伏特N沟道功率MOSFET
| 型号： | 4N60G-X-TQ3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N60
Power MOSFET
4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
1
TO-220F
TO-220F1
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF )
* Fast Switching Capability
1
1
TO-251
TO-252
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
1
1
2.Drain
TO-262
TO-263
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
4N60L-x-TA3-T
4N60L-x-TF1-T
4N60L-x-TF3-T
4N60L-x-TM3-T
4N60L-x-TN3-R
4N60L-x-T2Q-T
4N60L-x-TQ3-R
4N60L-x-TQ3-T
4N60G-x-TA3-T
4N60G-x-TF1-T
4N60G-x-TF3-T
4N60G-x-TM3-T
4N60G-x-TN3-R
4N60G-x-T2Q-T
4N60G-x-TQ3-R
4N60G-x-TQ3-T
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-262
TO-263
TO-263
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
S
Tube
Tube
S
S
S
S
S
S
S
Tube
Tube
Tape Reel
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-061, N
4N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
4N60-A
600
650
Drain-Source Voltage
VDSS
4N60-B
V
Gate-Source Voltage
VGSS
IAR
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
4N60
260
mJ
mJ
mJ
V/ns
W
Single Pulsed (Note 3)
EAS
Avalanche Energy
4N60-E
200
Repetitive (Note 2)
EAR
10.6
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
dv/dt
106
TO-220F/TO-220F1
TO-251
36
W
Power Dissipation
PD
50
W
TO-252
50
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-251
SYMBOL
RATINGS
62.5
62.5
83
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
Junction to Ambient
Junction to Case
θJA
TO-252
83
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-251
1.18
3.47
2.5
θJc
TO-252
2.5
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
4N60-A
4N60-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 600 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
10
μA
Forward
Reverse
100 nA
-100 nA
IGSS
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△T
J ID = 250 μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
2.5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 2.2 A
Ω
CISS
COSS
CRSS
520 670 pF
VDS = 25 V, VGS = 0 V, f = 1MHz
Output Capacitance
70
8
90
11
pF
pF
Reverse Transfer Capacitance
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4N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
13 35
ns
VDD = 300V, ID = 4.0A, RG = 25Ω
(Note 1, 2)
45 100 ns
Turn-Off Delay Time
Turn-Off Fall Time
25 60
35 80
ns
ns
Total Gate Charge
QG
15 20 nC
VDS= 480V,ID= 4.0A, VGS= 10 V
(Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
3.4
7.1
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 4.4 A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
tRR
V
GS = 0 V, IS = 4.4 A,
250
1.5
ns
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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4N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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4N60
Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
Note:
1. VGS=10V
2. ID=4A
0.9
0.8
Note:
1. VGS=0V
2. ID=250µA
0.5
0.0
200
0
-50
200
-100
-50
50
100
150
-100
0
50
100
150
Junction Temperature, TJ (°С)
Junction Temperature, TJ (°С)
On-State Characteristics
Transfer Characteristics
VGS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
25°С
1
5.0V
150°С
1
0.1
Notes:
Notes:
1. VDS=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. TC=25°С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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4N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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4N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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