4N70L-TN3-R [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 4N70L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N70
Power MOSFET
4.4A, 700V N-CHANNEL
POWER MOSFET
1
1
1
TO-220
TO-220F
DESCRIPTION
The UTC 4N70 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.
1
TO-252
TO-220F1
FEATURES
1
1
* RDS(ON) < 2.8Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 15nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )
* Fast Switching Capability
TO-262
TO-251
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
4N70L-TA3-T
4N70L-TF1-T
4N70L-TF3-T
4N70L-TM3-T
4N70L-TN3-R
4N70L-T2Q-T
4N70G-TA3-T
4N70G-TF1-T
4N70G-TF3-T
4N70G-TM3-T
4N70G-TN3-R
4N70G-T2Q-T
TO-220
TO-220F1
TO-220F
TO-251
G
G
G
G
G
G
D
D
D
D
D
D
Tube
Tube
Tube
Tube
TO-252
Tape Reel
Tube
TO-262
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-340.G
4N70
Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
TO-220
TO-220F
TO-220F1
TO-251
TO-252
TO-262
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4N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
700
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.4
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
17.6
A
EAS
260
mJ
mJ
V/ns
Avalanche Energy
EAR
10.6
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262
dv/dt
4.5
106
Power Dissipation
TO-220F/TO-220F1
TO-251/ TO-252
PD
36
W
49
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.9mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
TO-220F1/TO-262
TO-251/ TO-252
TO-220/TO-262
TO-220F/TO-220F1
TO-251/ TO-252
Junction to Ambient
Junction to Case
θJA
°С/W
110
1.18
3.47
2.55
θJC
°С/W
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4N70
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 700 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
700
V
10 μA
Forward
Reverse
100
nA
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID = 250μA, Referenced to 25°C
-100
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
V/°С
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
2.6 2.8
V
VGS = 10 V, ID = 2.2 A
Ω
CISS
COSS
CRSS
520 670 pF
70 90 pF
VDS = 25 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8
11 pF
tD(ON)
tR
tD(OFF)
tF
13 35
ns
Turn-On Rise Time
45 100 ns
VDD = 350V, ID = 4.4A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
25 60
35 80
ns
ns
Turn-Off Fall Time
Total Gate Charge
QG
15 20 nC
VDS= 560V, ID= 4.4A,
Gate-Source Charge
QGS
QGD
3.4
7.1
nC
nC
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 4.4 A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
VGS = 0 V, IS = 4.4 A,
dI/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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4N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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4N70
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs.
Gate Threshold Voltage
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
200 400 600 800 1000 1200 1400
1
0
2
3
4
5
6
7
Drain-Source Breakdown Voltage, BVDSS(V)
Gate Threshold Voltage, VTH (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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