8N65L-T2Q-T [UTC]
8A, 650V N-CHANNEL POWER MOSFET; 8A ， 650V N沟道功率MOSFET
| 型号： | 8N65L-T2Q-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 8A, 650V N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
8N65
Power MOSFET
8A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N65 is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) = 1.4Ω@VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
8N65L-TA3-T
8N65L-TF1-T
8N65L-TF3-T
8N65L-T2Q-T
8N65G-TA3-T
8N65G-TF1-T
8N65G-TF3-T
8N65G-T2Q-T
TO-220
TO-220F1
TO-220F
TO-262
G
G
G
G
D
D
D
D
Tube
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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8N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
650
±30
V
Avalanche Current (Note 2)
8
8
A
Continuous
ID
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
32
A
EAS
230
mJ
mJ
V/ns
W
Avalanche Energy
EAR
14.7
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220/TO-262
TO-220F/TO-220F1
147
Power Dissipation
PD
48
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤8A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
°C/W
°C/W
Junction to Ambient
θJA
TO-220/TO-262
0.85
Junction to Case
θJC
TO-220F/TO-220F1
2.6
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8N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
650
V
10
µA
Forward
Reverse
100 nA
-100 nA
V/°C
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
J ID =250μA,Referenced to 25°C
△BVDSS/△T
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.7
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
1.0 1.4
V
VGS = 10 V, ID = 4A
Ω
CISS
COSS
CRSS
965 1255 pF
105 135 pF
VDS = 25 V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
12
16
pF
tD(ON)
tR
tD(OFF)
tF
16.5 45
ns
VDD = 325V, ID =8A,
Turn-On Rise Time
60.5 130 ns
81 170 ns
64.5 140 ns
RG = 25Ω
(Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
28
4.5
12
36
nC
nC
nC
VDS= 520V,ID=8A,
Gate-Source Charge
QGS
QGD
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS =8A
1.4
8
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
32
A
Reverse Recovery Time
tRR
365
3.4
ns
VGS = 0 V, IS =8A,
dIF/dt = 100 A/µs (Note 2)
Reverse Recovery Charge
QRR
µC
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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8N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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8N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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8N65
Power MOSFET
TYPICAL CHARACTERISTICS
On-State Characteristics
VGS
Top: 15.0V
Transfer Characteristics
100
10
10.0V
8.0V
7.0V
10
150°C
6.5V
6.0V
5.5 V
25°C
Bottorm:5.0V
1
5.0V
1
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°C
Notes:
1. VDS=40V
2. 250µs Pulse Test
0.1
0.1
1
10
2
4
6
8
10
Drain-to-Source Voltage, VDS (V)
Gate-Source Voltage, VGS (V)
On-Resistance Variation vs. Drain
Current and Gate Voltage
Body Diode Forward Voltage vs. Source
Current
6
5
4
TJ=25°C
10
150°C
25°C
VGS=10V
3
2
1
VGS=20V
Notes:
1. VGS=0V
2. 250µs Test
1
0
0.1
0.2
0.4 0.6
0.8
1.2
1.0
1.4
1.6 1.8
0
5
10
15
20
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
ID=7.5A
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
1900
1700
Ciss
10
8
VDS=520V
VDS=300V
VDS=120V
1500
1300
1100
Coss
6
900
700
Crss
4
2
500
300
Notes:
1. VGS=0V
2. f = 1MHz
100
0
0
20
Total Gate Charge, QG (nC)
30
25
0
5
10
15
0.1
1
10
Drain-SourceVoltage, VDS (V)
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8N65
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
2.5
2.0
1.2
1.1
1.0
1.5
1.0
0.5
0.0
0.9
0.8
Note:
1. VGS=10V
2. ID=4A
Note:
1. VGS=0V
2. ID=250µA
0
200
-50
0
-100
50
100 150 200
-100 -50
50
100 150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
100
10
10
8
Operation in This Area is Limited by RDS(on)
10µs
100µs
1ms
6
10ms
DC
4
1
Notes:
2
0
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
0.1
1
10
100
25
50
75
100
125
150
1000
Drain-Source Voltage, VDS (V)
Case Temperature, TC (°C)
Transient Thermal Response Curve
D=0.5
1
D=0.2
D=0.1
0.1
D=0.05
0.02
0.01
Notes:
1. θJC (t) = 0.85°C/W Max.
Single pulse
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.01
10-4 10-3 10-2 10-1 100
101
10-5
Square Wave Pulse Duration, t1 (sec)
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8N65
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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