8N70KL-TF1-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 8N70KL-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
8N70K-MT
Power MOSFET
8A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N70K-MT is an N-channel power MOSFET using
UTC’s advanced technology to provide the customers with minimum
on-state resistance, superior switching performance and withstand
high energy pulse in the avalanche and commutation mode.
FEATURES
* RDS(ON) < 1.4Ω @ VGS=10V, ID=4A
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Tube
Lead Free
Halogen Free
8N70KG-TF1-T
D: Drain S: Source
1
2
3
8N70KL-TF1-T
TO-220F1
G
D
S
Note: Pin Assignment: G: Gate
MARKING
www.unisonic.com.tw
1 of 5
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R205-034.B
8N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
700
±30
8
VGSS
V
TC=25°C
A
Continuous
ID
Drain Current
TC=100°C
4.8
A
Pulsed (Note 4)
IDM
IAS
32
A
Avalanche Current
Avalanche Energy
Junction Temperature
Repetitive (Note 3)
Single Pulsed (Note 3)
8
A
EAS
TJ
300
+150
49
mJ
°C
W
°C
Power Dissipation (TC=25°C)
Storage Temperature
PD
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 9.37mH, IAS = 8A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. Limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.55
Note: 3urface mounted on FR4 board t≤10sec
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=700V, VGS=0V
DS=560V, TC=125°С
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
700
V
1
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
V
100 µA
+10 nA
-10 nA
Forward
Reverse
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4A
2.0
4.0
1.4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
1120
113
21
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
82
85
125
60
26
8
ns
ns
VDD =30V, ID =0.5A,
RG=25ꢀ (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
ns
ns
Total Gate Charge
QG
nC
nC
nC
VDS=50V, VGS=10V,
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
ID=1.3A (Note 1, 2)
6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
Integral reverse diode in the
MOSFET
8
A
A
V
ISM
VSD
32
1.4
IS=8A, VGS=0V
Notes: 1. Essentially independent of operating temperature.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R205-034.B
www.unisonic.com.tw
8N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R205-034.B
www.unisonic.com.tw
8N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R205-034.B
www.unisonic.com.tw
8N70K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State Resistance
Characteristics
Body-Diode Continuous Current vs.
Source to Drain Voltage
5
4
10
8
ID=4A, VGS=10V
3
2
6
4
2
0
1
0
1.5
3
4.5
7.5
0
6
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R205-034.B
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明