9N50KG-TF3-T [UTC]
N-CHANNEL POWER MOSFET;型号: | 9N50KG-TF3-T |
厂家: | Unisonic Technologies |
描述: | N-CHANNEL POWER MOSFET |
文件: | 总7页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
9N50K-MT
Power MOSFET
9A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N50K-MT is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance, superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 9N50K-MT is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 0.85Ω @ VGS = 10 V, ID = 4.5 A
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
9N50KL-TA3-T
9N50KL-TF3-T
9N50KL-TF1-T
9N50KL-TF2-T
9N50KG-TA3-T
9N50KG-TF3-T
9N50KG-TF1-T
9N50KG-TF2-T
TO-220
TO-220F
TO-220F1
TO-220F2
Tube
Tube
Tube
Tube
G
G
G
G
S
S
S
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
9N50KL-TA3-T
(1)Packing Type
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF2: TO-220F2
(2)Package Type
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
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QW-R205-016.D
9N50K-MT
Power MOSFET
MARKING
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9N50K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 2)
9 (Note 5)
36 (Note 5)
360
A
Drain Current
IDM
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.5
140
Power Dissipation
Derate above 25°C
PD
PD
TO-220F/TO-220F1
TO-220F2
47
1.1
W
TO-220
W/°C
W/°C
TO-220F/TO-220F1
TO-220F2
0.38
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 8mH, IAS = 9A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
°C/W
Junction to Ambient
θJA
TO-220
0.8
Junction to Case
θJC
TO-220F/TO-220F1
TO-220F2
2.62
°C/W
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9N50K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
DS=400V, TC=125°C
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
500
V
1
Drain-Source Leakage Current
Gate- Source Leakage Current
µA
V
10
Forward
Reverse
+100 nA
-100 nA
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.85
ꢀ
CISS
COSS
CRSS
685
115
12
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
62
86
ns
ns
VDD=30V, ID =0.5A, RG =25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
149
83
ns
ns
Total Gate Charge
QG
27.2
8.4
6.8
nC
nC
nC
V
DS=50V, ID=1.3A, VGS=10V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
9
A
A
V
ISM
VSD
36
1.4
IS=9A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
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9N50K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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9N50K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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9N50K-MT
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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