9N60 [ISC]
isc N-Channel Mosfet Transistor; ISC N沟道MOSFET晶体管
| 型号： | 9N60 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc N-Channel Mosfet Transistor |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
9N60
·FEATURES
·Drain Current –ID= 8.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
±20
8.5
V
A
IDM
Drain Current-Single Plused
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
34
A
PD
125
W
℃
℃
150
Tj
-55~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.0
UNIT
℃/W
℃/W
Rth j-c
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rth j-a
62.5
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
9N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)DSS
VGS
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
CONDITIONS
MIN
600
2
MAX
UNIT
V
VGS= 0; ID= 0.25mA
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 5A
VGS= ±20V; VDS= 0
VDS= 600V; VGS= 0
IS= 8.5A; VGS= 0
4
1.0
±100
1
V
)
(th
Drain-Source On-Resistance
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
Forward On-Voltage
Ω
RDS(
)
on
IGSS
nA
μA
V
IDSS
VSD
1.7
·
isc Website：www.iscsemi.cn
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