BD137G-10-T60-K [UTC]
Power Bipolar Transistor;型号: | BD137G-10-T60-K |
厂家: | Unisonic Technologies |
描述: | Power Bipolar Transistor |
文件: | 总3页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BD137
NPN SILICON TRANSISTOR
NPN POWER TRANSISTORS
FEATURES
* High current (max.1.5A)
* Low voltage (max.60V)
1
SOT-223
1
TO-126
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
E
2
C
C
3
E
B
-
BD137G-x-AA3-R
BD137G-xx-T60-K
SOT-223
TO-126
Tape Reel
Bulk
BD137L-xx-T60-K
BD137G-xx-AA3-R
(1) R: Tape Reel, K: Bulk
(2) AA3: SOT-223, T60: TO-126
(3) refer to CLASSIFICATION OF hFE
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-223
TO-126
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 3
QW-R204-033.b
BD137
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
60
60
V
5
V
1.5
3.0
0.5
1
A
ICM
A
lBM
A
W
W
°C
°C
°C
SOT-223
TO-126
Power Dissipation (TA=25°C)
PD
1.25
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-55~+150
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCEO
TEST CONDITIONS
IC=30mA, IB=0
MIN TYP MAX UNIT
Collector-Emitter Voltage (Note)
60
V
IE=0, VCB=30V
100 nA
Collector Cut-Off Current
ICBO
IEBO
IE=0, VCB=30V, TJ=125°C
IC=0, VEB=5V
10
10
μA
μA
Emitter Cut-Off Current
DC Current Gain (Note)
IC=5mA
25
40
25
40
63
VCE=2V
IC=150mA
IC=500mA
160
hFE
BD137-6
BD137-10
100
160
0.5
1
DC Current Gain (Note)
IC=150mA, VCE=2V
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Voltage (Note)
Transition Frequency
VCE(SAT) IC=500mA, IB=50mA
V
V
VBE
fT
IC=500mA, VCE=2V
IC=500mA, VCE=5V, f=100MHz
190
MHz
Note: Pulse Test: Pulse Width ≤ 300μS, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R204-033.b
www.unisonic.com.tw
BD137
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R204-033.b
www.unisonic.com.tw
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