首页 |元器件品牌

BD137L-6-T60-K [UTC]

Power Bipolar Transistor;
BD137L-6-T60-K
型号： BD137L-6-T60-K
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor
文件： 总3页 (文件大小：109K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
BD137  
NPN SILICON TRANSISTOR  
NPN POWER TRANSISTORS  
FEATURES  
* High current (max.1.5A)  
* Low voltage (max.60V)  
1
TO-126  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
TO-126  
Lead Free  
Halogen Free  
1
2
3
BD137L-xx-T60-K  
BD137G-xx-T60-K  
E
C
B
Bulk  
BD137L-xx-T60-K  
(1) K: Bulk  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(2) T60: TO-126  
(3) refer to CLASSIFICATION OF hFE  
(4) L: Lead Free, G: Halogen Free  
(4)Lead Plating  
www.unisonic.com.tw  
Copyright © 2013 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R204-033.a  
BD137  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Peak Collector Current  
Peak Base Current  
60  
60  
V
5
V
1.5  
3.0  
0.5  
1.25  
A
ICM  
A
lBM  
A
Power Dissipation (TA=25°C)  
Junction Temperature  
Operating Temperature  
Storage Temperature  
PD  
W
°C  
°C  
°C  
TJ  
+150  
TOPR  
TSTG  
-55~+150  
-55~+150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCEO  
TEST CONDITIONS  
IC=30mA, IB=0  
IE=0, VCB=30V  
MIN TYP MAX UNIT  
Collector-Emitter Voltage (Note)  
Collector Cut-Off Current  
Emitter Cut-Off Current  
60  
V
100 nA  
ICBO  
IEBO  
IE=0, VCB=30V, TJ=125°C  
IC=0, VEB=5V  
10  
10  
μA  
μA  
IC=5mA  
25  
40  
25  
40  
63  
DC Current Gain (Note)  
VCE=2V  
IC=150mA  
IC=500mA  
160  
hFE  
BD137-6  
BD137-10  
100  
160  
0.5  
1
DC Current Gain (Note)  
IC=150mA, VCE=2V  
Collector-Emitter Saturation Voltage (Note)  
Base-Emitter Voltage (Note)  
Transition Frequency  
VCE(SAT) IC=500mA, IB=50mA  
V
V
VBE  
fT  
IC=500mA, VCE=2V  
IC=500mA, VCE=5V, f=100MHz  
190  
MHz  
Note: Pulse Test: Pulse Width ≤ 300μS, Duty Cycle ≤ 2%.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R204-033.a  
www.unisonic.com.tw  
BD137  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R204-033.a  
www.unisonic.com.tw  

相关型号：

BD137L-XX-T60-K

 NPN POWER TRANSISTORS
UTC

BD137LEADFREE

 Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL

BD137T

 NPN Silicon Epitaxial Power Transistor
SEMTECH

BD137_15

 NPN POWER TRANSISTORS
UTC

BD138

 PNP power transistors
NXP

BD138

 PNP SILICON TRANSISTORS
STMICROELECTR

BD138

 Plastic Medium Power Silicon PNP Transistor
MOTOROLA

BD138

 POWER TRANSISTORS PNP SILICON
ONSEMI

BD138

 PNP SILICON TRANSISTORS
INFINEON

BD138

 Medium Power Linear and Switching Applications
FAIRCHILD

BD138

 PNP PLASTIC POWER TRANSISTORS
TRSYS

BD138

 PNP SILICON TRANSISTOR
UTC
©2020 ICPDF网 联系我们和版权申明