BD138G-10-T60-K [UTC]
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3;型号: | BD138G-10-T60-K |
厂家: | Unisonic Technologies |
描述: | Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3 局域网 放大器 晶体管 |
文件: | 总4页 (文件大小:199K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
1
DESCRIPTION
TO-251
The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP
transistor, designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
The complementary NPN types are the BD135/BD137/ BD139.
1
TO-126
1
TO-126C
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
E
B
E
B
E
E
B
2
C
C
C
C
C
C
C
3
B
E
B
E
B
B
E
Lead Free
Halogen Free
BD136L-x-T60-K
BD136L-x-TM3-T
BD138L-x-T60-K
BD138L-x-TM3-T
BD140L-x-T60-K
BD140L-x-T6C-K
BD140L-x-TM3-T
BD136G-x-T60-K
BD136G-x-TM3-T
BD138G-x-T60-K
BD138G-x-TM3-T
BD140G-x-T60-K
BD140G-x-T6C-K
BD140G-x-TM3-T
TO-126
TO-251
TO-126
TO-251
TO-126
TO-126C
TO-251
Bulk
Tube
Bulk
Tube
Bulk
Bulk
Tube
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
MARKING INFORMATION
MARKING
BD138
PACKAGE
BD136
BD140
TO-251
TO-126
TO-126C
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Copyright © 2014 Unisonic Technologies Co., LTD
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QW-R204-013.D
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
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BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
BD136
SYMBOL
VCBO
RATINGS
-45
UNIT
V
Collector-Base Voltage
BD138
BD140
BD136
BD138
BD140
-60
-80
-45
Collector-Emitter Voltage
VCEO
-60
V
-80
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
VEBO
IC
ICM
IB
-5
V
V
A
A
-1.5
-3
-0.5
12.5
15
TO-126/TO-126C
TO-251
Power Dissipation TC≦25°C
PD
W
Junction Temperature
Storage Temperature
TJ
150
°C
°C
TSTG
-40 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
TO-126/TO-126C
TO-251
100
83
Junction to Ambient
Junction to Case
θJA
TO-126/TO-126C
TO-251
10
θJC
°C/W
8.3
ELECTRICAL CHARACTERISTICS (TC=25℃,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
-45
BD136
BD138
BD140
Collector-Emitter
Sustaining Voltage
VCEO(SUS) IC =-30mA, IB=0 (Note)
-60
-80
V
V
CB =-30 V, IE=0
-0.1
-10
-10
Collector Cut-off Current
Emitter Cut- off Current
ICBO
μA
μA
VCB =-30 V, IE=0, TC = 125C
VEB = -5 V, IC=0
IEBO
hFE1
hFE2
hFE3
VCE=-2V, IC =-5mA,
VCE=-2V, IC =-0.5A
25
25
40
DC Current Gain
VCE=-2V, IC =-150mA
250
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC =-0.5A, IB = -0.05A (Note)
VBE IC =-0.5A, VCE =-2 V (Note)
V
V
Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 %
CLASSIFICATION OF hFE3
RANK
6
10
16
100~250
RANGE
40~100
63~160
UNISONIC TECHNOLOGIES CO., LTD
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BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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相关型号:
BD138G-16-T60-K
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3
UTC
BD138L-10-T60-K
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3
UTC
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