IMZ88L-AG6-R [UTC]
GENERAL PURPOSE DUAL TRANSISTOR); 通用双晶体管)![IMZ88L-AG6-R](http://pdffile.icpdf.com/pdf1/p00176/img/icpdf/IMZ88_986449_icpdf.jpg)
型号: | IMZ88L-AG6-R |
厂家: | ![]() |
描述: | GENERAL PURPOSE DUAL TRANSISTOR) |
文件: | 总3页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
UNISONIC TECHNOLOGIES CO., LTD
IMZ88
DUAL TRANSISTOR
GENERAL PURPOSE
(DUAL TRANSISTOR)
FEATURES
*Both a 8550S chip and 8050S chip in a SMT package
EQUIVALENT CIRCUITS
(6)
(4)
(5)
TR2
TR1
(1)
(2)
(3)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-26
Packing
Lead Free
Halogen Free
1
2
3
4
5
6
IMZ88L-AG6 -R
IMZ88G-AG6-R
C2 E2 C1 E1 B1 B2 Tape Reel
IMZ88L-AG6-R
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Free
(2) AG6: SOT-26
(3) G: Halogen Free, L: Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R215-005.Ca
IMZ88
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
RATING
PARAMETER
SYMBOL
UNIT
TR2
TR1
-30
-20
-5
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
30
20
5
V
V
V
-700
700
mA
mW
°C
°C
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature
PD
300
150
TJ
TSTG
-65~+150
Note: 1. 200mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
IC=-100μA,IE=0
-30
-20
-5
V
V
V
IC= -1mA, IB=0
IE=-100μA,IC=0
VCB=-30V,IE=0
VEB= -5V, IC=0
-1
µA
µA
V
Emitter Cut-Off Current
IEBO
-100
-0.5
-1.2
-1.0
Collector-Emitter Saturation Voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
VCE(SAT) IC=-500mA, IB=-50mA
VBE(SAT)
VBE
IC= 500mA, IB=-50mA
VCE=-1V, IC=-10mA
VCE= -1V, IC = -1mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V,IC=-50mA
VCB=10V,IE=0, f=1MHz
V
V
hFE1
hFE2
hFE3
fT
100
120
40
DC Current Transfer Ratio
110
9.0
400
Transition Frequency
100
MHz
pF
Output Capacitance
COB
TR2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
IC=100μA,IE=0
IC=1mA,IB=0
IE=100μA,IC=0
VCB=30V
30
20
5
V
V
V
1
µA
µA
V
IEBO
VEB=5V
100
0.5
1.2
1.0
Collector-Emitter Saturation Voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT)
VBE
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC = 1mA
VCE=1V, IC=150mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
V
V
hFE1
hFE2
hFE3
fT
100
120
40
DC Current Transfer Ratio
110
9.0
400
Transition Frequency
Output Capacitance
100
MHz
pF
COB
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R215-005.Ca
www.unisonic.com.tw
IMZ88
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R215-005.Ca
www.unisonic.com.tw
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/IMZA120R020M_2257699_files/IMZA120R020M_2257699_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/IMZA120R020M_2257699_files/IMZA120R020M_2257699_2.jpg)
IMZA120R020M1H
采用TO247-4封装的1200V 20mΩ CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺,该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅(Si)基器件相比,SiC MOSFET具有诸多优势,例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此,CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IMZA65R027M1_2228712_files/IMZA65R027M1_2228712_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IMZA65R027M1_2228712_files/IMZA65R027M1_2228712_2.jpg)
IMZA65R027M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/IMZA65R030M1_2245418_files/IMZA65R030M1_2245418_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00367/img/page/IMZA65R030M1_2245418_files/IMZA65R030M1_2245418_2.jpg)
IMZA65R030M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R030M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/IMZA65R039M1_2247898_files/IMZA65R039M1_2247898_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/IMZA65R039M1_2247898_files/IMZA65R039M1_2247898_2.jpg)
IMZA65R039M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R039M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IMZA65R048M1_2227403_files/IMZA65R048M1_2227403_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IMZA65R048M1_2227403_files/IMZA65R048M1_2227403_2.jpg)
IMZA65R048M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R048M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/IMZA65R057M1_2233020_files/IMZA65R057M1_2233020_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/IMZA65R057M1_2233020_files/IMZA65R057M1_2233020_2.jpg)
IMZA65R057M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/IMZA65R072M1_2256013_files/IMZA65R072M1_2256013_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00370/img/page/IMZA65R072M1_2256013_files/IMZA65R072M1_2256013_2.jpg)
IMZA65R072M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。 IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00363/img/page/IMZA65R107M1_2223943_files/IMZA65R107M1_2223943_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00363/img/page/IMZA65R107M1_2223943_files/IMZA65R107M1_2223943_2.jpg)
IMZA65R107M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。 IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。
INFINEON
©2020 ICPDF网 联系我们和版权申明