MJE13003-C-T92-A-K [UTC]
Transistor;
| 型号： | MJE13003-C-T92-A-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13003
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
Lead-free: MJE13003L
Halogen-free: MJE13003G
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Pin Assignment
Package
Packing
Normal
Halogen-Free
1
E
B
E
B
E
E
B
B
B
B
2
3
B
E
B
E
B
B
E
E
E
E
MJE13003-x-T60-A-K MJE13003L-x-T60-A-K MJE13003G-x-T60-A-K TO-126
MJE13003-x-T60-F-K MJE13003L-x-T60-F-K MJE13003G-x-T60-F-K TO-126
MJE13003-x-T6C-A-K MJE13003L-x-T6C-A-K MJE13003G-x-T6C-A-K TO-126C
MJE13003-x-T6C-F-K MJE13003L-x-T6C-F-K MJE13003G-x-T6C-F-K TO-126C
MJE13003-x-T92-A-B MJE13003L-x-T92-A-B MJE13003G-x-T92-A-B TO-92
MJE13003-x-T92-A -K MJE13003L-x-T92-A-K MJE13003G-x-T92-A-K TO-92
MJE13003-x-TA3-A-T MJE13003L-x-TA3-A-T MJE13003G-x-TA3-A-T TO-220
MJE13003-x-TM3-A-T MJE13003L-x-TM3-A-T MJE13003G-x-TM3-A-T TO-251
MJE13003-x-TN3-A-R MJE13003L-x-TN3-A-R MJE13003G-x-TN3-A-R TO-252
MJE13003-x-TN3-A-T MJE13003L-x-TN3-A-T MJE13003G-x-TN3-A-T TO-252
C
C
C
C
C
C
C
C
C
C
Bulk
Bulk
Bulk
Bulk
Tape Box
Bulk
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
1 of 7
Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R204-004,H
MJE13003
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
VCEO(SUS)
VCBO
VEBO
IC
400
700
9
V
V
V
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
TO-126
1.5
Collector Current
A
A
A
ICM
3
IB
0.75
1.5
Base Current
IBM
IE
2.25
4.5
Emitter Current
IEM
1.4
W
W
W
W
W
°C
°C
Total Power Dissipation (Ta=25°C)
TO-92
1.1
PD
TO-220
40
Total Power Dissipation (TC=25°C)
TO-252
25
TO-251
20
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10 mA , IB=0
400
V
V
V
CEO=Rated Value,
BE(OFF)=1.5 V
TC=25°C
1
5
1
Collector Cutoff Current
ICEO
IEBO
mA
mA
TC=100°C
Emitter Cutoff Current
VEB=9 V, IC=0
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Is/b
See Figure 5
See Figure 6
Clamped Inductive SOA with base
reverse biased
RBSOA
ON CHARACTERISTICS (Note)
hFE1
hFE2
IC=0.5A, VCE=2V
IC=1A, VCE=2V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
8
5
40
25
0.5
1
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(SAT
)
V
V
3
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
1
1
Base-Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=0.25A
1.2
1.1
IC=1A, IB=0.25A, TC=100°C
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
fT
IC=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
10
21
MHz
pF
Cob
tD
tR
tS
tF
0.05
0.5
2
0.1
1
μs
μs
μs
μs
Rise Time
VCC=125V, IC=1A, IB1=IB2=0.2A,
tP=25μs, Duty Cycle≤1%
Storage Time
4
Fall Time
0.4
0.7
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R204-004,H
www.unisonic.com.tw
MJE13003
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS(Cont.)
Inductive Load, Clamped (Table 1)
Storage Time
tSTG
tC
1.7
4
μs
μs
μs
IC=1A, Vclamp=300V, IB1=0.2A,
BE(OFF)=5Vdc, TC=100°C
Crossover Time
0.29 0.75
0.15
V
Fall Time
tF
Note: Pulse Test : PW=300μs, Duty Cycle≤2%
CLASSIFICATION OF hFE1
RANK
A
B
C
D
E
F
RANGE
8 ~ 16
15 ~ 21
20 ~ 26
25 ~ 31
30 ~ 36
35 ~ 40
Table 1.Test Conditions for Dynamic Performance
Resistive
Switching
Reverse Bias Safe Operating Area and Inductive Switching
+5V
Vcc
33
1N4933
MJE210
L
MR826*
0.001μF
+125V
33 1N4933
5V
Vclamp
Ic
Pw
2N2222
1k
+5V
Rc
RB
1k
DUTY CYCLE≦10%
tR, tF≦10ns
TUT
68
*SELECTED FOR≣1kV
SCOPE
RB
D1
IB
5.1k
51
VCE
1k
T.U.T.
1N4933
270
2N2905
47
-4.0V
MJE200
0.02μF
NOTE
100
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
1/2W
-VBE(OFF)
Coil Data :
VCC=20V
Ferroxcube core #6656
Vclamp=300V
GAP for 30 mH/2 A
Lcoil=50mH
V
CC=125V
RC=125Ω
D1=1N5820 or
Equiv.
Full Bobbin ( ~ 200 Turns) #20
RC=47Ω
Output Waveforms
+10.3 V
0
25μS
tf CLAMPED
t
Ic
Ic(pk)
t1 Adjusted to
Obtain Ic
t1
tf
Test Equipment
Scope-Tektronics
475 or Equivalent
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Lcoil(Icpk)
t1≒
Vcc
VCE
VCE or
Vclamp
Lcoil(Icpk)
Vclamp
t2≒
t
TIME
t2
Table 2. Typical Inductive Switching Performance
Figure 1. Inductive Switching Measurements
ICPK
Tc
°C
tsv
µs
Vclamp
t
µs
RV
t
µs
FI
t
µs
TI
Ic
AMP
tc
µs
90% Ic
90% Vclamp
t
RV
t
FI
tsv
t
TI
IC
0.35
0.40
0.30
0.30
0.30
0.36
1.3 0.23
1.6 0.26
25
100
0.5
1
tc
VCE
IB
25
100
1.5 0.10 0.14 0.05 0.16
1.7 0.13 0.26 0.06 0.29
10% Vclamp 10%
Icpk
2% Ic
90% IB1
0.10 0.05 0.16
0.22 0.08 0.28
1.8
3
0.07
0.08
25
100
1.5
NOTE: All Data Recorded in the Inductive Switching
Circuit in Table 1
Time
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R204-004,H
www.unisonic.com.tw
MJE13003
NPN SILICON TRANSISTOR
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
t
t
SV = Voltage Storage Time, 90% IB1 to 10% Vclamp
RV = Voltage Rise Time, 10 ~ 90% Vclamp
tFI= Current Fall Time, 90 ~ 10% IC
TI = Current Tail, 10 ~ 2% IC
t
tC = Crossover Time, 10% Vclamp to 10% IC
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC (tC) f
In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which
are guaranteed at 100°C.
RESISTIVE SWITCHING PERFORMANCE
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
www.unisonic.com.tw
QW-R204-004,H
MJE13003
NPN SILICON TRANSISTOR
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5.
TJ(PK) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA
characteristics.
The Safe Operating Area of Figures 5 and 6 are specified ratings (for these devices under the test conditions
shown.)
Figure 5. Active Region Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
10
5
1.6
1.2
10 ms
2
1
100μs
5.0 ms
VBE(OFF)=9V
dc
1.0 ms
0.5
TJ≦100℃
IB1=1A
Tc=25℃
0.8
0.4
0
0.2
0.1
Thermal Limit(Single Pule)
Bonding Wire Limit
Second Breakdown Limit
Curves Apply Below Rated
0.05
VCEO
5V
0.02
0.01
3V
1.5V
10
20
50
100
500
400
600
700
800
5
200 300
0
100
200
300
500
Collector-Emitter Clamp Voltage,VCE (V)
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
QW-R204-004,H
www.unisonic.com.tw
MJE13003
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain
Collector Saturation Region
80
60
2
TJ=25℃
TJ=150℃
1.6
40
30
25℃
Ic=0.1A
1.2
0.8
0.4
0
0.3A
0.5A
1A 1.5A
20
-55℃
1
0
8
VCE=2V
- - - - - -VCE=5V
6
4
0.03
0.07 0.1
0.2 0.3
0.5 0.7
0.005
0.02
0.05 0.1 0.2
0.5
0.05
1
2
0.002
0.01
1
2
0.02
Collector Current,IC (A)
Base Current, IB (A)
Base-Emitter Voltage
Collector-Emitter Saturation Region
1.4
1.2
0.35
0.3
VBE(SAT) @ IC/IB=3
- - - - - -VBE(ON) @ VCE=2V
0.25
0.2
Ic/IB=3
1
0.8
0.6
TJ=-55℃
25℃
TJ=-55℃
0.15
0.1
25℃
25℃
150℃
150℃
0.05
0.4
0
0.02
0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7
1
0.03 0.05 0.07 0.1
0.2 0.3
0.5
0.7
1
2
0.02
2
Collector Current,IC (A)
Collector Current, IC (A)
Capacitance
Cib
Collector cut-off Region
4
10
500
VCE=250V
300
200
TJ=25℃
3
10
TJ=150℃
100
70
2
10
125℃
100℃
50
1
10
30
20
75℃
50℃
0
10
Cob
10
25℃
7
5
FORWARD
+0.2 +0.4
REVERSE
-1
10
-0.4
2
200 500 1000
100
-0.2
0
0.2 0.5
0.1
1
5
10 20 50
+0.6
Base-Emitter Voltage, VBE (V)
Reverse Voltage, VR (V)
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R204-004,H
www.unisonic.com.tw
MJE13003
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
100
80
60
40
20
0
25
50
75
100 125 150
Ta (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R204-004,H
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明