MJE13009-K [UTC]
SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS;型号: | MJE13009-K |
厂家: | Unisonic Technologies |
描述: | SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
文件: | 总9页 (文件大小:440K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13009-K
NPN SILICON TRANSISTOR
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
DESCRIPTION
The MJE13009-K is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
FEATURES
* VCEO 400V and 300 V
* Reverse Bias SOA with Inductive Loads @ TC = 100°C
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C
tC @ 8 A, 100°C is 120 ns (Typ).
*700 V Blocking Capability
*SOA and Switching Applications Information.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
MJE13009L-K-TA3-T
MJE13009L-K-T3P-T
MJE13009G-K-TA3-T
MJE13009G-K-T3P-T
TO-220
TO-3P
Tube
Tube
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MJE13009-K
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
NPN SILICON TRANSISTOR
PARAMETER
Collector-Emitter Voltage
SYMBOL
VCEO
VCEV
VEBO
IC
RATINGS
UNIT
400
V
V
V
Collector-Emitter Voltage (VBE=-1.5V)
Emitter Base Voltage
700
9
Continuous
12
Collector Current
Base Current
A
Peak (Note 3)
Continuous
Peak (Note 3)
Continuous
Peak (Note 3)
TO-220
ICM
24
IB
6
A
A
IBM
12
IE
18
Emitter Current
Power Dissipation
Derate above 25°C
IEM
36
2
80
W
TO-3P
PD
TO-220
16
mW/°C
TO-3P
640
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
°C
°C
TSTG
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
TO-220
TO-3P
TO-220
TO-3P
54
21
Junction to Ambient
Junction to Case
θJA
4
θJC
°C/W
1.55
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note)
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
VCEO
ICEV
IC = 10mA, IB = 0
400
V
V
V
BE(OFF) = 1.5VDC
BE(OFF) = 1.5VDC, TC = 100°C
1
5
1
mA
mA
VCBO=Rated Value
Emitter Cutoff Current
IEBO
VEB = 9VDC, IC = 0
ON CHARACTERISTICS (Note)
hFE1
IC = 5A, VCE = 5V
IC = 8A, VCE = 5V
40
30
DC Current Gain
hFE 2
IC = 5A, IB = 1A
1
V
V
V
V
V
V
V
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1.5
3
Current-Emitter Saturation Voltage
VCE(SAT)
IC = 8A, IB = 1.6A, TC = 100°C
IC = 5A, IB = 1A
2
1.2
1.6
1.5
Base-Emitter Saturation Voltage
VBE(SAT) IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A, TC = 100°C
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ELECTRICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
PARAMETER
DYNAMIC CHARACTERISTICS
Transition frequency
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
fT
IC = 500mA, VCE = 10V, f = 1MHz
VCB = 10V, IE = 0, f = 0.1MHz
4
MHz
pF
Output Capacitance
COB
180
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
tDLY
tR
0.06 0.1
µs
µs
µs
µs
V
CC = 125Vdc, IC = 8A
0.45
1.3
1
4
I
B1 = IB2 = 1.6A, tP = 25μs
tS
Duty Cycle ≤1%
tF
0.2
0.7
Inductive Load, Clamped (Table 1, Fig. 13)
Voltage Storage Time
tS
tC
IC=8A, VCLAMP=300V, IB1=1.6A
0.92 2.3
0.12 0.7
µs
µs
VBE(OFF) = 5V, TC = 100°C
Crossover Time
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
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TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
+5V
VCC
33
1N4933
MJE210
L
MR826*
0.001µF
1N4933
33
5V
VCLAMP
IC
2N2222
PW
RB
1k
DUTY CYCLE ≤ 10%
tR, tF ≤ 10 ns
68
*SELECTED FOR . 1 kV
VCE
1k
+5V
5.1k
51
IB
1k
D.U.T.
1N4933
270
2N2905
47
MJE200
0.02µF
100
Note:
1/2W
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
-VBE(OFF)
V
CC = 125V
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
RC = 15Ω
D1 = 1N5820 or Equiv.
RB = Ω
GAP for 200μH/20A
LCOIL = 200μH
VCC = 20V
VCLAMP = 300VDC
+10V
25µs
0
-8V
tR, tF < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
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TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIRCUIT
LOAD LINE DIAGRAMS
TIME DIAGRAMS
TURN–ON (FORWARD BIAS) SOA
tON ≤ 10 ms
24A
SERIES SWITCHING
REGULATOR
DUTY CYCLE ≤ 10%
PD = 4000 W
2
T
C = 100°C
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(OFF) ≤ 9.0 V
12A
TURN–ON
DUTY CYCLE ≤ 10%
VCC
VOUT
TURN–OFF
+
1
1
400V
700V
VCC
COLLECTOR VOLTAGE
RINGING CHOKE
INVERTER
TURN–ON (FORWARD BIAS) SOA
IC
24A
tON ≤10 ms
DUTY CYCLE ≤10%
PD = 4000 W
2
tOFF
TC = 100 C
12A
VCC
VOUT
tON
350V
t
N
TURN–OFF (REVERSE BIAS) SOA
LEAKAGE SPIKE
VCE
1.5 V ≤VBE(off) ≤9.0 V
TURN–OFF
DUTY CYCLE ≤10%
+
VCC
N(VO)
TURN–ON
VCC
+
VCC
1
1
400V
700V
t
VCC+N(VOUT)
COLLECTOR VOLTAGE
PUSH–PULL
INVERTER/CONVERTER
VOUT
VCC
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TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE
IC(A)
3
TC(°C)
25
100
25
100
25
100
25
tSV(ns)
770
1000
630
tRV(ns)
100
230
72
100
55
tFI(ns)
150
160
26
tTI(ns)
200
200
10
30
2
tC(ns)
240
320
100
180
77
120
41
54
5
8
820
55
720
920
27
50
70
8
640
800
20
32
17
24
2
4
12
100
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and
voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE
power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to determine the total switching time. For this reason, the following
new terms have been defined.
t
t
t
t
SV = Voltage Storage Time, 90% IB1 to 10% VCEM
RV = Voltage Rise Time, 10–90% VCEM
FI = Current Fall Time, 90–10% ICM
TI = Current Tail, 10–2% ICM
tC = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in Fig. 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tC) f
Typical inductive switching waveforms are shown in Fig. 14. In general, tRV + tFI ≈ tC. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which
are guaranteed at 100℃.
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TYPICAL CHARATERISTICS
Fig. 3 Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
1
Second Breakdown
Derating
0.8
The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated when TC ≥ 25°C.
Second breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Fig. 1 may
be found at any case temperature by using the appropriate curve
on Fig. 3.
0.6
0.4
Thermal
Derating
TJ(PK) may be calculated from the data in Fig. 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Fig. 2) is discussed in the applications information
section.
0.2
0
20
40
60
80
100
120
140
160
Case Temperature, TC (°C)
Fig. 4 Typical Thermal Response [ZθJC(t)]
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(PK)
0.1
ZθJC(t) = r(t) θJC
0.05
0.02
θ
JC = 1.25°C/W MAX
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
t1
0.03
0.02
t2
TJ(PK) – TC = P(PK) ZθJC(t)
0.01
Duty Cycle, D = t1/t2
Single Pulse
0.05 0.1
0.01
0.01 0.02
0.2
0.5
1
2
5
10
20
50
100
200
500 1.0k
Time, t (ms)
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TYPICAL CHARACTERISTICS (Cont.)
Fig. 9 Collector Cutoff Region
Fig. 10 Capacitance
10k
1k
4k
2k
TJ = 25°C
VCE = 250V
CIB
TJ = 150°C
125°C
1k
800
600
100
100°C
400
10
1
75°C
50°C
COB
200
100
80
25°C
60
40
REVERSE
-0.2
Base–Emitter Voltage, VBE (V)
FORWARD
0.1
-0.4
0
+0.2 +0.4
+0.6
0.1 0.2 0.5 1 2 5 10 20 50 100
Reverse Voltage, VR (V)
200
500
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■ RESISTIVE SWITCHING PERFORMANCE
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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