MMBT1015L-Y-AC3-6-R [UTC]
Transistor;
| 型号： | MMBT1015L-Y-AC3-6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT1015
PNP SILICON TRANSISTOR
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to MMBT1815
*Pb-free plating product number: MMBT1015L
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
E
E
E
2
B
B
B
3
C
C
C
MMBT1015-x-AC3-6-R
MMBT1015-x-AE3-6-R
MMBT1015-x-AN3-6-R
MMBT1015L-x-AC3-6-R
MMBT1015L-x-AE3-6-R
MMBT1015L-x-AN3-6-R
SOT-113
SOT-23
Tape Reel
Tape Reel
Tape Reel
SOT-523
MARKING
A4
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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MMBT1015
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
VCBO
RATINGS
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
-50
V
VEBO
-5
V
SOT-23/SOT-113
SOT-523
250
mW
mW
mA
mA
Collector Dissipation
PC
200
Collector Current
Base Current
IC
IB
-150
-50
Junction Temperature
Storage Temperature
TJ
125
℃
℃
TSTG
-65 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
BVCBO Ic = -100μA, IE = 0
BVCEO Ic = -10mA, IB = 0
-50
-50
-5
V
V
V
V
V
BVEBO IE = -10μA, Ic = 0
VCE(SAT) Ic = -100mA, IB = -10mA
VBE(SAT) Ic = -100mA, IB = -10mA
-0.1 -0.3
-1.1
ICBO
IEBO
hFE1
hFE2
fT
VCB = -50V, IE = 0
VEB = -5V, Ic = 0
-100 nA
-100 nA
700
Emitter Cut-off Current
VCE = -6V, Ic = -2mA
120
25
DC Current Gain
VCE = -6V, Ic = -150mA
Current Gain Bandwidth Product
Output Capacitance
VCE = -10V, Ic = -1mA
VCB = -10V, IE = 0, f = 1MHz
Ic = -0.1mA, VCE = -6V
RG= 1kΩ, f = 100Hz
80
MHz
COB
4.0 7.0
0.5
pF
Noise Figure
NF
6
dB
CLASSIFICATION OF hFE1
RANK
Y
GR
BL
350-700
RANGE
120-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-015,D
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MMBT1015
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Fig.1 Static Characteristics
Fig.2 DC Current Gain
-50
-40
3
10
VCE =-6V
IB =-300 A
2
10
-30
-20
IB =-250 A
IB =-200 A
1
10
IB =-150 A
IB =-100 A
-10
0
IB =-50
A
0
10
-0
-4
-8
-12
-16
-20
-1
-10
0
1
2
3
-10
-10
-10
-10
Collector-Emitter Voltage ( V)
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
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MMBT1015
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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