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MMBT1015R(SOT-113) [UTC]

Transistor;
MMBT1015R(SOT-113)
型号： MMBT1015R(SOT-113)
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Transistor
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UTCMMBT1015 PNP EPITAXIAL SILICON TRANSISTOR  
LOW FREQUENCY PNP  
AMPLIFIER TRANSISTOR  
FEATURES  
*Collector-Emitter Voltage:  
2
BVCEO=-50V  
1
*Collector current up to 150mA  
*High Hfe linearity  
*Complement to MMBT1815  
3
MARKING  
A4  
SOT-113  
1:EMITTER 2:BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
RATING  
-50  
UNIT  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector dissipation  
Collector current  
-50  
-5  
250  
-150  
-50  
V
mW  
mA  
mA  
°C  
Ic  
IB  
Base current  
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
125  
-65 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
SYMBOL  
TEST CONDITIONS  
Ic=-100µA,IE=0  
MIN TYP MAX UNIT  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-50  
-50  
-5  
V
V
V
nA  
nA  
Ic=-10mA,IB=0  
IE=-10µA,Ic=0  
VCB=-50V,IE=0  
VEB=-5V,Ic=0  
-100  
-100  
400  
Emitter cut-off current  
IEBO  
DC current gain(note)  
hFE1  
VCE=-6V,Ic=-2mA  
VCE=-6V,Ic=-150mA  
Ic=-100mA,IB=-10mA  
Ic=-100mA,IB=-10mA  
VCE=-10V,Ic=-1mA  
VCB=-10V,IE=0,f=1MHz  
Ic=-0.1mA,VCE=-6V  
RG=1kΩ,f=100Hz  
70  
25  
hFE2  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Current gain bandwidth product  
Output capacitance  
VCE(sat)  
VBE(sat)  
fT  
Cob  
NF  
-0.1  
-0.3  
-1.1  
V
V
80  
MHz  
pF  
dB  
4.0  
0.5  
7.0  
6
Noise Figure  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R210-003,A  
UTCMMBT1015 PNP EPITAXIAL SILICON TRANSISTOR  
CLASSIFICATION OF hFE1  
RANK  
Y
R
RANGE  
120-240  
200-400  
TYPICAL CHARACTERISTIC CURVES  
Fig.1 Static characteristics  
Fig.2 DC current Gain  
Fig.3 Base-Emitter on Voltage  
-50  
-40  
3
2
10  
-10  
VCE=-6V  
VCE=-6V  
I
B
=-300  
=-250  
µ
A
A
2
10  
1
-10  
-30  
-20  
IB  
µ
I
B=-200  
µA  
1
0
10  
-10  
I
B
=-150  
µA  
µA  
µ
A
-10  
0
IB  
=-100  
I
B=-50  
0
-1  
-10  
10  
-0  
-4  
-8  
-12  
-16  
-20  
-1  
-10  
0
1
2
3
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-10  
-10  
-10  
-10  
Collector-Emitter voltage ( V)  
Fig.4 Saturation voltage  
Ic,Collector current (mA)  
Base-Emitter voltage (V)  
Fig.5 Current gain-bandwidth  
product  
Fig.6 Collector output  
Capacitance  
3
1
2
10  
-10  
10  
-1  
Ic=10*I  
B
-10  
VCE=-6V  
f=1MHz  
2
0
VBE(sat)  
IE=0  
10  
-10  
1
10  
-1  
-10  
1
0
10  
10  
VCE(sat)  
-1  
10  
0
-2  
-10  
10  
-1  
-10  
0
1
2
3
-10  
-1  
-10  
0
1
2
0
1
2
3
-10  
-10  
-10  
-10  
-10  
-10  
-10  
-10  
-10  
-10  
Ic,Collector current (mA)  
Ic,Collector current (mA)  
Collector-Base voltage (V)  
2
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R210-003,A  

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