MMBT1116 [UTC]

PNP EPITAXIAL SILICON TRANSISTOR;
MMBT1116
型号: MMBT1116
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PNP EPITAXIAL SILICON TRANSISTOR

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
MMBT1116/A  
PNP SILICON TRANSISTOR  
PNP EPITAXIAL SILICON  
TRANSISTOR  
3
DESCRIPTION  
Complement to UTC MMBT1616/A  
1
2
SOT-23  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
E
E
2
B
B
3
C
C
MMBT1116L-x-AE3-R  
MMBT1116AL-x-AE3-R  
MMBT1116G-x-AE3-R  
MMBT1116AG-x-AE3-R  
SOT-23  
SOT-23  
Tape Reel  
Tape Reel  
MARKING  
11A  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
1 of 4  
Copyright © 2014 Unisonic Technologies Co., LTD  
QW-R206-098.C  
MMBT1116/A  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (TA=25C,unless otherwise specified )  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
MMBT1116  
MMBT1116A  
MMBT1116  
MMBT1116A  
-60  
-80  
Collector to Base Voltage  
VCBO  
-50  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCEO  
V
-60  
VEBO  
IC  
-6  
V
A
DC  
-1  
Pulse(Note2)  
ICM  
PC  
-2  
A
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
350  
mW  
C  
C  
TJ  
+150  
-55 ~ +150  
TSTG  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width10ms, Duty cycle50%  
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.)  
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT  
Collector-Emitter Saturation  
Voltage(Note)  
VCE(SAT) IC=-1A, IB=-50mA  
-0.2  
V
Base-Emitter Saturation Voltage(Note)  
Base Emitter On Voltage(Note)  
Collector Cut-Off Current  
Emitter Cut-Off Current  
VBE(SAT) IC=-1A, IB=-50mA  
VBE(ON) VCE=-2V, IC=-50mA  
-0.9  
-1.2  
V
-600 -650 -700  
mV  
nA  
nA  
ICBO  
IEBO  
VCB=-60V, IE=0  
VEB=-6V, IC=0  
-100  
-100  
MMBT1116  
135  
135  
81  
600  
400  
V
CE=-2V,  
hFE1  
IC=-100mA  
DC Current Gain(Note)  
MMBT1116A  
hFE2  
fT  
VCE=-2V, IC=-1A  
Transition Frequency  
Output Capacitance  
VCE=-2V, IC=-100mA  
70  
120  
25  
MHz  
pF  
Cob  
VCB=-10V, IE=0, f=1MHz  
V
CC=-10V, IC=-100mA  
Turn On Time  
tON  
0.07  
μs  
IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V  
Storage Time  
Fall Time  
tSTG  
tF  
0.7  
μs  
μs  
0.07  
Note: Pulse Test: Pulse width350μs, Duty cycle2%  
CLASSIFICATION OF hFE1  
RANK  
Y
G
L
hFE1  
135 ~ 270  
200 ~ 400  
300 ~ 600  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-098.C  
www.unisonic.com.tw  
MMBT1116/A  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristic  
Static Characteristic  
-1.0  
-0.8  
-0.6  
-0.4  
-100  
I =-4.0mA  
B
IB=-4.5mA  
IB=-5.0mA  
IB=-250μA  
IB=-200μA  
-80  
IB=-3.0mA  
IB=-2.5mA  
IB=-150μA  
-60  
IB=-100μA  
IB=-1.5mA  
IB=-1.0mA  
-40  
IB=-50μA  
-0.2  
0.0  
-20  
IB=-0.5mA  
0
0.0  
-0.2 -0.4  
-0.6 -0.8  
0
-2  
-4  
-6  
-8  
-10  
-1.0  
Collector-Emitter Voltage, VCE (V)  
Collector-Emitter Voltage, VCE (V)  
Base-Emitter Saturation Voltage  
DC Current Gain  
VCE=-2V  
Collector-Emitter Saturation Voltage  
1000  
-10  
-1  
IC=20IB  
VBE(sat)  
100  
10  
-0.1  
VCE(sat)  
-0.01  
1
-0.01  
-0.1  
Collector Current, Ic (mA)  
-1  
-10  
-0.01  
-0.1  
Collector Current, IC (A)  
-10  
-1  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-098.C  
www.unisonic.com.tw  
MMBT1116/A  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
Safe Operating Area  
200ms  
Current Gain Bandwidth Product  
1000  
-10  
-1  
VCE=-2V  
100  
10  
1
-0.1  
-0.01  
-0.01  
-0.1  
Collector Current, IC (mA)  
-1  
-10  
-10  
Collector-Emitter Voltage, CE (V
-1  
-00  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-098.C  
www.unisonic.com.tw  

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