MMBT9012I [UTC]

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN;
MMBT9012I
型号: MMBT9012I
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

晶体 放大器 小信号双极晶体管 输出元件
文件: 总3页 (文件大小:100K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC MMBT9012  
PNP EPITAXIAL SILICON TRANSISTOR  
1W OUTPUT AMPLIFIER OF  
POTABLE RADIOS IN CLASS B  
PUSH-PULL OPERATION  
FEATURES  
2
*High total power dissipation. (625mW)  
*High collector current. (-500mA)  
*Excellent hFE linearity  
1
*Complementary to UTC MMBT9013  
3
MARKING  
12  
SOT-23  
1: EMITTER 2: BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
RATING  
-40  
UNIT  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Collector dissipation  
Junction Temperature  
Storage Temperature  
-20  
-5  
-500  
225  
V
mA  
mW  
°C  
Pc  
Tj  
TSTG  
150  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=-100µA,IE=0  
MIN TYP MAX UNIT  
-40  
-20  
-5  
V
V
V
nA  
nA  
Ic=-1mA,IB=0  
IE=-100µA, Ic=0  
VCB=-25V,IE=0  
VEB=-3V,IC=0  
-100  
-100  
300  
Emitter cutoff current  
IEBO  
DC current gain  
hFE1  
VCE=-1V,Ic=-50mA  
VCE=-1V,Ic=-500mA  
Ic=-500mA,IB=-50mA  
Ic=-500mA,IB=-50mA  
VCE=-1V,Ic=-10mA  
64  
40  
120  
90  
hFE2  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
-0.18 -0.6  
-0.95 -1.2  
-0.6 -0.67 -0.7  
V
V
V
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R206-020,A  
UTC MMBT9012  
PNP EPITAXIAL SILICON TRANSISTOR  
CLASSIFICATION OF hFE1  
RANK  
D
E
F
G
H
I
RANGE  
64-91  
78-112  
96-135  
112-166  
144-202  
190-300  
2
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R206-020,A  
UTC MMBT9012  
PNP EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
3
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R206-020,A  

相关型号:

MMBT9012L-E-AE3-R

Small Signal Bipolar Transistor,
UTC

MMBT9012L-F-AE3-R

Small Signal Bipolar Transistor,
UTC

MMBT9012L-G-AE3-R

Small Signal Bipolar Transistor,
UTC

MMBT9012L-H-AE3-R

Small Signal Bipolar Transistor,
UTC

MMBT9012L-I-AE3-R

Small Signal Bipolar Transistor,
UTC

MMBT9012LT1

PNP EPITAXIAL SILICON TRANSISTOR
WINNERJOIN

MMBT9012LT1_15

PNP EPITAXIAL SILICON TRANSISTOR
WINNERJOIN

MMBT9012_15

1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
UTC

MMBT9013

1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
UTC

MMBT9013

NPN Silicon Epitaxial Planar Transistors
SEMTECH

MMBT9013-D-AE3-R

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
UTC

MMBT9013-E-AE3-R

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
UTC