MMBTA13 [UTC]
DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR; 达林顿晶体管NPN外延硅晶体管
| 型号： | MMBTA13 |
| 厂家： | 
Unisonic Technologies |
| 描述： | DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC MMBTA13
NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MMBTA13 is a Darlington transistor.
2
FEATURES
1
*Collector-Emitter Voltage: VCES = 30V
*Collector Dissipation: Pc (mas) = 350 mW
3
MARKING
1M
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCES
VEBO
Pc
VALUE
30
30
10
350
500
150
-55 ~ +150
UNIT
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Current
Junction Temperature
Storage Temperature
V
mW
mA
°C
Ic
Tj
TSTG
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
SYMBOL
BVCES
ICBO
TEST CONDITIONS
Ic=100µA,IB=0
MIN MAX UNIT
30
10000
125
V
VCB=30V,IE=0
VEB=10V,Ic=0
100
100
nA
nA
Emitter Cut-Off Current
IEBO
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
hFE
VCE=5V,Ic=100mA
Ic=100mA,IB=0.1mA
VCE=5V,Ic=100mA
VCE=5V,Ic=10mA,
f=100MHz
VCE(sat)
VBE(on)
fT
1.5
2.0
V
V
MHz
Current Gain Bandwidth Product
Pulse test: Pulse Width<300µs, Duty Cycle=2%
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R206-006,B
UTC MMBTA13
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Current Gain & Collector Current
1000k
Saturation Voltage & Collector Current
10000
VBE(sat)@IC=100IB
hFE@VCE=5V
100k
10k
1000
100
VCE(sat)@IC=100IB
1
10
100
0.1
1000
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
On Voltage & Collector Current
10000
10
1000
100
VBE(on)@VCE=5V
Cob
1
1
10
100
1
10
100
0.1
1000
Collector Current (mA)
Reverse-Biased Voltage(V)
Safe Operating Area
Cutoff Frequency & Collector Current
1000
1000
PT=1s
PT=100ms
PT=1ms
100
10
1
VCE=5V
100
10
1
10
Forward Voltage-VCE(V)
100
1
10
100
1000
Collector Current (mA)
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R206-006,B
UTC MMBTA13
NPN EPITAXIAL SILICON TRANSISTOR
Power-Dissipation
vs Ambient Temperature
1
0.75
0.5
0.25
0
150
75
100 125
0
25
50
Temperature (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R206-006,B
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