MMBTA45_15 [UTC]
HIGH VOLTAGE TRANSISTORS;
| 型号： | MMBTA45_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTORS 高压 |
| 文件： | 总4页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBTA44/45
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTORS
FEATURES
*Collector-Emitter voltage: VCEO=400V (UTC MMBTA44)
CEO=350V (UTC MMBTA45)
V
*Collector current up to 300mA
*Complement to UTC MMBTA94/93
*Power Dissipation: PD(max)=350mW
Lead-free:
MMBTA44L/MMBTA45L
Halogen-free: MMBTA44G/MMBTA45G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
Halogen Free
1
E
E
2
B
B
3
C
C
MMBTA44-AE3-R
MMBTA45-AE3-R
MMBTA44L-AE3-R MMBTA44G-AE3-R
MMBTA45L-AE3-R MMBTA45G-AE3-R
SOT-23
SOT-23
Tape Reel
Tape Reel
MARKINGS
MMBTA45
MMBTA44
3D
35
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd.
1 of 4
QW-R206-007.E
MMBTA44/45
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
RATINGS
500
UNIT
V
MMBTA44
Collector-Base Voltage
Collector-Emitter Voltage
MMBTA45
MMBTA44
MMBTA45
400
V
400
V
VCEO
350
V
Emitter-Base Voltage
Collector Current
VEBO
IC
6
V
300
mA
mW
W
Ta=25°C
TC=25°C
350
Power Dissipation
PD
1.5
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown
Voltage
MMBTA44
MMBTA45
500
400
400
350
6
V
V
V
V
V
BVCBO
IC=100μA, IB=0
Collector-Emitter Breakdown MMBTA44
Voltage
BVCEO
BVEBO
IC =1mA, IB=0
MMBTA45
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IE=100μA, IC =0
IC =1mA, IB=0.1mA
IC =10mA, IB=1mA
IC =50mA, IB=5mA
0.4
0.5
V
V
VCE(SAT)
0.75
V
VBE(SAT)
ICBO
IC 10mA, IB=1mA
VCB=400V, IE =0
VCB=320V, IE =0
VCE =400V, IB=0
0.75
0.1
0.1
0.5
0.5
0.1
V
MMBTA44
μA
μA
μA
μA
μA
Collector Cut-off Current
MMBTA45
MMBTA44
MMBTA45
Collector Cut-off Current
Emitter Cut-off Current
ICES
VCE =320V, IB=0
IEBO
hFE1
hFE2
hFE3
hFE4
VEB=4V, IC =0
VCE =10V, IC =1mA
40
50
45
40
VCE =10V, IC =10mA
VCE =10V, IC =50mA
VCE =10V, IC =100mA
VCE =20V, IC =10mA
240
DC Current Gain (Note)
Current Gain Bandwidth Product
fT
50
MHz
pF
f=100MHz
Output Capacitance
Cob
VCB=20V, IE =0, f=1MHz
7
Note: Pulse test: PW<300μs, Duty Cycle<2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-007.E
www.unisonic.com.tw
MMBTA44/45
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOS CO., LTD
3 of 4
QW-R206-007.E
www.unisonic.com.tw
MMBTA44/45
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(cont.)
High Frequency Current Gain
Safe Operating Area
Valid Duty
102
104
103
VCE =10V
Cycle
<10%
f=10 MHz
25°C
Ta=
1ms
1s
101
0.1ms
102
101
100
100
MPSA 44
10-1
10-1
100
101
102
Collector Current, IC (mA)
103
100
101
102
103
104
Collector Voltage(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-007.E
www.unisonic.com.tw
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