MMBTA56_10 [UTC]
AMPLIFIER TRANSISTOR; 晶体管放大器
| 型号： | MMBTA56_10 |
| 厂家： | 
Unisonic Technologies |
| 描述： | AMPLIFIER TRANSISTOR |
| 文件： | 总5页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBTA56
PNP SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
FEATURES
3
* Collector-Emitter Voltage: VCEO=-80V
* Collector Dissipation: PD=350mW
1
2
SOT-23
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
MMBTA56L-AE3-R
Halogen Free
1
2
3
MMBTA56G-AE3-R
E
B
C
Tape Reel
MARKING
www.unisonic.com.tw
1 of 5
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R206-090,B
MMBTA56
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-80
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
-80
V
Emitter-Base Voltage
-4
V
Collector Current - Continuous
Total Device Dissipation(Note 1)
Derate Above 25℃
-500
mA
mW
mW/℃
℃
350
2.8
PD
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
℃
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
SYMBOL
MAX
357
UNIT
θJA
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
BVCEO IC=-1.0mA, IB=0
-80
-4
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
BVEBO IE=-100μA, Ic=0
V
ICES
ICBO
VCE=-60V, IB=0
VCB=-80V, IE=0
-0.1
-0.1
μA
μA
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
100
100
hFE
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
VCE(SAT) IC=-100mA, IB=-10mA
VBE(ON) IC=-100mA, VCE=-1V
-0.25
-1.2
V
V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(Note2)
IC=-10mA, VCE=-2V,
f=100MHz
fT
100
MHz
Note 1: Pulse test: PW≤300μs, Duty Cycle≤2%
2: fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R206-090,B
www.unisonic.com.tw
MMBTA56
PNP SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUITS
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R206-090,B
www.unisonic.com.tw
MMBTA56
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Active-Region Safe Operating Area
Switching Time
ts
-1.0K
-700
1.0K
700
500
1.0ms
-500
TC=25℃
-300
-200
300
200
1.0s
tf
TA=25℃
100
70
50
-100
-70
-50
MMBTA55
VCC=-40V
IC/IB=10
IB1=IB2
MMBTA56
-30
-20
30
20
Current Limit
Thermal Limit
Second Breakdown Limit
tr
TJ=25℃
td@VBE(off)=-0.5V
-10
10
-5.0-7.0
-20 -30-50-70-100-200-300-500
Collector Current, IC (mA)
-10
-1.0 -2.0-3.0-5.0-7.0-10-20-30 -50-70-100
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R206-090,B
www.unisonic.com.tw
MMBTA56
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R206-090,B
www.unisonic.com.tw
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